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  n-channl Datasheet PDF File

For n-channl Found Datasheets File :: 19    Search Time::2.64ms    
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    STC4516 STC4516S8RG STC4516S8TG

Stanson Technology
Part No. STC4516 STC4516S8RG STC4516S8TG
OCR Text N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state r...
Description Complementary Dual Enhancement Mode MOSFET

File Size 913.93K  /  9 Page

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    WTV3585

Weitron Technology
Part No. WTV3585
OCR Text N AND P-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 6 DRAIN N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMP...Channl P-Channl 20 12 3.5 2.8 10 1.14 110 +150 -55~+150 -20 12 -2.5 -1.97 -10 A W C/W C C Unit V V A...
Description NAND P-Channel Enhancement Mode POWER MOSFET

File Size 1,430.29K  /  8 Page

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    WTK4501

Weitron Technology
Part No. WTK4501
OCR Text N AND P-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 7,8 DRAIN N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMP...Channl P-Channl 30 20 7 5.8 20 2.0 62.5 +150 -55~+150 -30 16 -5.3 -4.7 -20 A W C/W C C Unit V V A ...
Description N AND P-Channel Enhancement Mode POWER MOSFET
   N AND P-Channel Enhancement Mode POWER MOSFET

File Size 1,862.49K  /  10 Page

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    FW250

Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. FW250
OCR Text n-channl Silicon MOSFET FW250 Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2129 [FW250] 8 5 0.3 4.4 6.0 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 5.0 1.5 Specificatio...
Description n-channl Silicon MOSFET Ultrahigh-Speed Switching Applications - Channl硅MOSFET的超高速开关应

File Size 30.11K  /  4 Page

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    SANYO
Part No. 2SK3705
OCR Text n-channl Silicon MOSFET 2SK3705 Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specific...
Description High Output MOSFETs

File Size 42.76K  /  5 Page

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    SANYO
Part No. 2SK2617LS
OCR Text n-channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Features * * Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 Low ON-resistance. Low Qg. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2...
Description High Output MOSFETs

File Size 35.30K  /  5 Page

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    MCH6406

Sanyo Semicon Device
Part No. MCH6406
OCR Text n-channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features * * * Package Dimensions unit : mm 2193A [MCH6406] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 2.1...
Description Ultrahigh-Speed Switching Applications

File Size 33.72K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SK3703
OCR Text n-channl Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features * * * * Package Dimensions unit : mm 2063A [2SK3703] 10.0 3.2 3.5 7.2 Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive...
Description High Output MOSFETs
General-Purpose Switching Device Applications

File Size 33.86K  /  4 Page

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    2SJ653

Sanyo Semicon Device
Part No. 2SJ653
OCR Text ... 2 DC op era tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.1 --0.1 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT06554 ...
Description High Output MOSFETs
General-Purpose Switching Device Applications

File Size 31.31K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SJ657
OCR Text ...). DC op era tio n --0.1 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC IT06595 Drain-to-Source Voltage, VDS -- V 5 7--100 2 IT06596 No.7685-3/4 2SJ657 2.5 PD...
Description General-Purpose Switching Device

File Size 31.12K  /  4 Page

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For n-channl Found Datasheets File :: 19    Search Time::2.64ms    
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