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  mirrorbit Datasheet PDF File

For mirrorbit Found Datasheets File :: 270    Search Time::2.422ms    
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    Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM29LV160MT70RWAI AM29LV160MB35EI AM29LV160MT35EI AM29LV160MB70RPCI AM29LV160MB70REI AM29LV160MT70REI AM29LV160MT70RPCI AM29LV160MT85PCI AM29LV160MT35PCI AM29LV160MT85FI AM29LV160MB30FI AM29LV160MB70RFI AM29LV160MT35FI AM29LV160MT70RFI AM29LV160MT50FI AM29LV160MT30FI AM29LV160MB90FI AM29LV160MB50FI AM29LV160MB85FI AM29LV160MB35FI AM29LV160MT85WAI AM29LV160MB30WAI AM29LV160MB50WAI AM29LV160MB35WAI AM29LV160MB50PCI AM29LV160MT50PCI AM29LV160MT90PCI AM29LV160MT90WAI
OCR Text ...abit (2 m x 8-bit/1 m x 16-bit) mirrorbit tm 3.0 volt-only boot sector flash memory distinctive characteristics architectural advantages
Description 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) mirrorbit TM 3.0 Volt-only Boot Sector Flash Memory 16兆位米8 1个M x 16位)的mirrorbit3.0伏,只引导扇区闪
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) mirrorbit TM 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA64

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    S29GL256N

SPANSION
Part No. S29GL256N
OCR Text mirrorbit? flash family s29gl512n, s29gl256n, s29gl128n 512 megabit, 256 megabit, and 128 megabit, 3.0 volt-only page mode flash memory featuring 110 nm mirrorbit? process technology data sheet notice to readers: this document states...
Description Page Mode Flash Memory

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    Advanced Micro Devices, Inc.
Part No. 29LV160M AM29LV160MT100EI AM29LV160MT100FI AM29LV160MT100PCI AM29LV160MT100WAI
OCR Text ...abit (2 m x 8-bit/1 m x 16-bit) mirrorbit tm 3.0 volt-only boot sector flash memory data sheet distinctive characteristics architectural advantages
Description 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) mirrorbit 3.0 Volt-only Boot Sector Flash Memory

File Size 1,056.58K  /  60 Page

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    Advanced Micro Devices, Inc.
Part No. AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI AM29LV256ML123RPGI AM29LV256ML123RFI AM29LV256ML123REI AM29LV256MH123REI
OCR Text ...it (16 m x 16-bit/32 m x 8-bit) mirrorbit tm 3.0 volt-only uniform sector flash memory with versatilei/o tm control distinctive characteristics architectural advantages
Description 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位)mirrorbitTM 3.0伏特,只有统一闪存部门与VersatileI /价外控制

File Size 630.04K  /  70 Page

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    Advanced Micro Devices, Inc.
Part No. AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV256MH40EI AM29LV256MH40EF AM29LV256MH30FI AM29LV256MH30EI AM29LV256MH30EF L256ML123RI L256MH123RI L256ML113RF L256MH113RI L256MH123RF AM29LV256ML123RPGF AM29LV256ML123PGF AM29LV256ML123PGI AM29LV256MH123RPGF AM29LV256MH113PGI AM29LV256MH113PGF AM29LV256ML113RPGF AM29LV256ML113RPGI AM29LV256MH113RPGF AM29LV256ML113PGF AM29LV256ML113PGI AM29LV256ML103PGF AM29LV256ML123REF AM29LV256ML123FF AM29LV256ML100EI AM29LV256ML100FI AM29LV256ML100PGF AM29LV256ML103EI AM29LV256ML103RFI AM29LV256ML113RFI AM29LV256ML103EF AM29LV256ML103FF AM29LV256ML103FI AM29LV256ML113FI AM29LV256ML103RPGF AM29LV256ML123FI AM29LV256ML103RFF AM29LV256ML100EF AM29LV256ML113EF AM29LV256ML103PGI AM29LV256ML103REI AM29LV256ML103RPGI AM29LV256ML113FF AM29LV256ML123EI AM29LV256ML113REF AM29LV256ML123EF AM29LV256ML100FF AM29LV256ML100PGI AM29LV256ML103REF AM29LV256ML113EI AM29LV256ML113REI AM29LV256MH103EI AM29LV256MH103FI AM29LV256MH103PGF AM29LV256MH103REI AM29LV256MH103RFI AM29LV256MH103EF AM29LV256MH103PGI AM29LV256MH103RFF AM29LV256MH103RPGF AM29LV256MH103FF AM29LV256MH103REF AM29LV256MH103RPGI AM29LV256MH123EI AM29LV256MH113EI AM29LV256MH100EI AM29LV256MH110FI AM29L
OCR Text ...t (16 m x 16-bit /32 m x 8-bit) mirrorbit tm 3.0 volt-only uniform sector flash memory with versatilei/o tm control distinctive characteristics architectural advantages
Description 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) mirrorbitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位)mirrorbitTM 3.0伏特,只有统一闪存部门与VersatileI /价外控制

File Size 548.75K  /  69 Page

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    Spansion Inc.
Spansion, Inc.
Part No. S71WS512N S71WS512P
OCR Text ... s29ws256n s29ws512p technology mirrorbit ? mirrorbit ? process rule 110 nm 90 nm v cc 1.70 v to 1.95 v 1.70 v to 1.95 v v io (v ccq )=v cc =v cc max density 256 mb 512 mb configuration register cr0-cr15 cr0.0 - cr0.15, cr1.0 - cr1.15 sect...
Description Migrating from the S71WS512N to the S71WS512P 从S71WS512N迁移到S71WS512P

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    Spansion Inc.
Spansion, Inc.
Part No. S73WS-P S75WS256NDGBFWLH2 S75WS256NDGBFWLH0 S75WS256NDGBFWLJ0 S75WS256NDGBFWLJ2 S75WS256NDGBFWLH3 S75WS256NDFBAWLH0 S75WS256NDFBAWLJ0 S75WS256NDFBAWLJ2 S75WS256NDFBAWLH3 S75WS256NDFBAWLH2 S75WS256NDFBFWLH3 S75WS256NDGBAWSJ3 S75WS256NDGBFWLJ3 S75WS256NDGBAWSH3
OCR Text ...h process technology p = 90 nm, mirrorbit tm technology code flash density 512 = 512mb product family s73ws stacked products (mcp) 1.8 v nor flash and mobile dram table 4.1 character position descriptions (sheet 1 of 2) character 12 ch...
Description Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品(MCP

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    Spansion Inc.
Spansion, Inc.
SPANSION LLC
Part No. S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
OCR Text mirrorbit tm flash family s29gl256m, s29gl128m, s29gl064m, s29gl032m 256 megabit, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive chara...
Description MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的mirrorbit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um mirrorbit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (&#181;s) typ: 0.055; Package: LDPAK (L)

File Size 2,173.74K  /  160 Page

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