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List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC
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| Part No. |
S7105-04 S5629-02 S6515 S7105-05 S1881 S1880 S4584-06 S3274-05 S5990-01 S4580-04 S4580-06 S1300 PSD6407 S1352 S1200 S6407 S4584-04 S8361 S3273-05 S4582-06 S4582-04 S3272-05 S7105-06 S5629-01 S2044
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| OCR Text |
...type for red light detection, a microscopic spot light (LD beam, etc.) detection type, and a long, narrow type with an active area exceeding 30 mm.
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Type No. S6407 S6515 S4580-04 S4580-06 S4581-04 S4581-... |
| Description |
POSITION SENSITIVE DETECTOR 位置灵敏探测
MR Series Rocker, 1 lamp circuit (Clear Red) miniature rectangle housing, SPDT, 2 position, Quick-connect, Snap-in panel, Silver alloy contacts
MR Series Rocker, 1 lamp circuit (Clear Green) miniature rectangle housing, SPDT, 2 position, Quick-connect, Snap-in panel, Silver alloy contacts
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| File Size |
1,288.32K /
16 Page |
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it Online |
Download Datasheet
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...mounds)* quantitative by 200x microscopic inspection 10 defects in 3 or less of the 9 fields inspected in a cross pattern 10 defects in 5 or less of the 9 fields inspected in a cross pattern contamination quantitative by 200x microscopic ... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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