|
|
|
TRIQUINT SEMICONDUCTOR INC
|
Part No. |
TQM613030
|
OCR Text |
...p units frequency 824 - 849 mhz max p out 26 dbm acpr (885khz offset) at max p out -50 dbc altr (1.98mhz offset) at max p out -6...894 mhz, t=25oc 50 - - db stability (all spurious) load vswr = 10:1 @ all angles - - -90 d... |
Description |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC20
|
File Size |
294.31K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
RF Monolithics
|
Part No. |
SF1183G
|
OCR Text |
...nits center frequency f c 881.5 mhz insertion loss 869 ~ 894 mhz il 2.1 2.8 db amplitude ripple (p-p) 869 ~ 894 mhz 0.6 1.2 return loss 869 ~ 894 mhz 9.0 12.0 attenuation (reference level from 0 db) dc ~ 840 mhz 45 50 db 840 ~ 851 mhz 38 45... |
Description |
SAW Filter
|
File Size |
380.49K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
RF Monolithics
|
Part No. |
SF1183B
|
OCR Text |
...operating frequency f c 1 881.5 mhz passband insertion loss across 869-894 il 2.0 3.0 db amplitude ripple p-p across 869-894 1.0 2.0 attenuation 10 -849 mhz 1, 2, 3 20 23.0 db 914 -939 mhz 20 30.0 939 -1049 mhz 23.0 25.0 1049 -2000 mhz 20 2... |
Description |
SAW Filter
|
File Size |
237.21K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
飞思卡尔半导体(中国)有限公司 MOTOROLA[Motorola, Inc]
|
Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
|
OCR Text |
...akes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA...894 MHz and 921-960 MHz Output Power -- 3 Watts Avg. Power Gain -- 31 dB Efficiency -- 19% Spectral ... |
Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
File Size |
665.04K /
16 Page |
View
it Online |
Download Datasheet |
|
|
|
ERICSSON[Ericsson]
|
Part No. |
PTF10161
|
OCR Text |
MHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of g... |
Description |
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
|
File Size |
286.01K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|