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				Cypress Semiconductor, Corp.
Part No.	CY9C62256 CY9C62256-70PC CY9C62256-70SC CY9C62256-70SI CY9C62256-70SNI CY9C62256-70ZC CY9C62256-70ZI CY9C62256-70PI CY9C62256-70SNC
OCR Text	...ike interface. The CY9C62256 is inherently nonvolatile and offers write protect during sudden power loss. Functional operation of the MRAM is similar to SRAM-type devices, otherwise. Memory Architecture Users access 32,768 memory locations ...
Description	32K x 8 Magnetic Nonvolatile CMOS RAM SPECIALTY MEMORY CIRCUIT, PDSO28
File Size	295.12K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	CS8147YT5 CS8147 CS8147YTHA5 CS8147YTVA5 CS8147-D CS8147/D
OCR Text	... 70 mA. The secondary output is inherently stable and does not require an external capacitor. The on board ENABLE function controls the regulator's two outputs. When ENABLE is high, the regulator is placed in SLEEP mode. Both outputs are di...
Description	10 V/5.0 V Low Dropout Dual Regulatorwith ENABLEbar 10 V/5.0 V Low Dropout Dual Regulator with ENABLE
File Size	82.36K / 12 Page	View it Online	Download Datasheet

				Ramtron
Part No.	FM1808-70-P
OCR Text	...atisfied. battery. FRAM uses an inherently nonvolatile storage mechanism that requires no battery. It therefore eliminates these weaknesses. The major considerations in upgrading to FRAM follow: Construction Issues 1. Cost The cost of both ...
Description
File Size	89.50K / 12 Page	View it Online	Download Datasheet

				TRIAD MAGNETICS
Part No.	VPP24-830-13
OCR Text	.... recommended fuse 3 : series: inherently limited. no fusing required. parallel: littelfuse p/n 313 2hxp, 2.0a 250v, slow blow, ? x 1 ? or , cooper bussmann p/n bk/mdl-2, 2.0a 250v, ? x 1 ? construction: dual bobbin co...
Description	Hipot: 4000VAC between primary to secondary and windings to core.
File Size	88.13K / 1 Page	View it Online	Download Datasheet

				Ramtron International Corp.
Part No.	FM18L08
OCR Text	...a battery-backed SRAM. They are inherently vulnerable to shock and vibration. If the battery contact comes loose, data will be lost. In addition a negative voltage, even a momentary undershoot, on any pin of a battery-backed SRAM can cause ...
Description	256Kb Bytewide FRAM Memory(256Kb宽字节FRAM存储 From old datasheet system
File Size	80.39K / 12 Page	View it Online	Download Datasheet

				Supertex, Inc
Part No.	HV9931
OCR Text	...he input inrush current, and is inherently protected from input under-voltage condition. Capacitive isolation protects the LED Lamp from failure of the switching MOSFET. HV9931 provides a low-frequency PWM dimming input that can accept an e...
Description	UNITY POWER FACTOR LED LAMP DRIVER
File Size	431.48K / 7 Page	View it Online	Download Datasheet

				Supertex, Inc
Part No.	HV9931LG-G HV993107
OCR Text	...he input inrush current, and is inherently protected from input under-voltage condition. Capacitive isolation protects the LED Lamp from failure of the switching MOSFET. HV9931 provides a low-frequency PWM dimming input that can accept an e...
Description	HV9931 Unity Power Factor LED Lamp Driver
File Size	714.04K / 8 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY9C6225605 CY9C62256-70ZC CY9C62256-70SNC CY9C62256-70SI CY9C62256-70SC CY9C62256-70SNI CY9C62256-70ZI
OCR Text	...ike interface. The CY9C62256 is inherently nonvolatile and offers write protect during sudden power loss. Functional operation of the MRAM is similar to SRAM-type devices, otherwise. Memory Architecture Users access 32,768 memory locations ...
Description	32K x 8 Magnetic Nonvolatile CMOS RAM
File Size	272.90K / 11 Page	View it Online	Download Datasheet

For inherently Found Datasheets File :: 2589 Search Time::2.531ms
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