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  id-1.8a Datasheet PDF File

For id-1.8a Found Datasheets File :: 978    Search Time::3.843ms    
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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
OCR Text ...d volta ge 15 10 I 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency ...18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf ...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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    STU3055L2 STD3055L2

SAMHOP[SamHop Microelectronics Corp.]
Part No. STU3055L2 STD3055L2
OCR Text ... VDSS 20V FEATURES (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON). 40 @ VGS = 10V 45 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 639.84K  /  7 Page

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    IRLZ34S IRLZ34L

IRF[International Rectifier]
Part No. IRLZ34S IRLZ34L
OCR Text ...S = 60V RDS(on) = 0.050 G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processin...18A 0.07 VGS = 4.0V, ID = 15A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 18A 25 VDS = 60V, ...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET

File Size 353.16K  /  10 Page

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    FS10SM-18A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10SM-18A
OCR Text .............................. 1.2 ID ......................................................................................... 10A TO-3P ...18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description HIGH-SPEED SWITCHING USE

File Size 40.44K  /  4 Page

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    FS2KM-18 FS2KM-18A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS2KM-18 FS2KM-18A
OCR Text .............................. 7.3 ID ........................................................................................... 2A Viso ........18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description HIGH-SPEED SWITCHING USE

File Size 42.76K  /  4 Page

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    AF4362N AF4362NS AF4362NSA AF4362NSL AF4362NSLA

ANACHIP[Anachip Corp]
Part No. AF4362N AF4362NS AF4362NSA AF4362NSL AF4362NSLA
OCR Text ...ary BVDSS (V) 30 RDS(ON) (m) 6 ID (A) 18 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Des...18A Static Drain-Source VGS=4.5V, ID=12A On-Resistance (Note 3) VGS=2.5V, ID=6A Gate Threshold Volta...
Description N-Channel Enhancement Mode Power MOSFET

File Size 376.48K  /  5 Page

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    IRFSL31N20D IRFB31N20D IRFS31N20D IRFB31N20

IRF[International Rectifier]
Part No. IRFSL31N20D IRFB31N20D IRFS31N20D IRFB31N20
OCR Text ... 200V RDS(on) max 0.082 ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance In...18A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VG...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
SMPS MOSFET

File Size 187.80K  /  11 Page

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    IRG4BC10KD IRG4BC10KDPBF

International Rectifier
Part No. IRG4BC10KD IRG4BC10KDPBF
OCR Text ... d volta ge I 2.0 1.0 Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency...18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf...
Description 9 A, 600 V, N-CHANNEL IGBT, TO-220AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

File Size 203.75K  /  10 Page

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    IRL640A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRL640A
OCR Text ...A BVDSS = 200 V RDS(on) = 0.18 ID = 18 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS ...18A, RG=4.6 See Fig 13 VDS=160V,VGS=5V, ID=18A (4) (5) See Fig 6 & Fig 12 (4) (5) Sourc...
Description Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET

File Size 224.82K  /  7 Page

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    IRFB30N20D

International Rectifier
Part No. IRFB30N20D
OCR Text ... 200V RDS(on) max 0.082 ID 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance In...18A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VG...
Description HEXFET? Power MOSFET

File Size 134.36K  /  11 Page

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For id-1.8a Found Datasheets File :: 978    Search Time::3.843ms    
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