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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TB1261F TB1262F
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OCR Text |
...by 15.9mV per 1 rise. (*2) This IC is weak against static electricity and surge impulse. Please take counter measure to meet, if necessary. (*3) This IC is not proofed enough against a strong E-M field by CRT which mau cause function error ... |
Description |
BiCMOS INTEGRATED CIRCUIT / SILICON MONOLITHIC TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC
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File Size |
1,533.98K /
67 Page |
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