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  hvigbt Datasheet PDF File

For hvigbt Found Datasheets File :: 100    Search Time::1.719ms    
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    CM1200HA-34H

Mitsubishi Electric Semiconductor
Part No. CM1200HA-34H
OCR Text hvigbt MODULES CM1200HA-34H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-34H q IC................................................................ 1200A q VCES ......
Description 1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 44.59K  /  4 Page

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    CM1200HA-66H03

Mitsubishi Electric Semiconductor
Part No. CM1200HA-66H03
OCR Text hvigbt MODULES CM1200HA-66H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-66H q IC................................................................ 1200A q VCES ......
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 41.37K  /  4 Page

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    CM1200HA-66H

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. CM1200HA-66H
OCR Text ... Som ARY LIMIN MITSUBISHI hvigbt MODULES CM1200HA-66H HIGH POWER SWITCHING USE INSULATED TYPE hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-66H q IC ................................................
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 52.26K  /  3 Page

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    Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
Part No. CM1200HB-66H
OCR Text hvigbt MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H q IC................................................................ 1200...
Description HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT

File Size 50.20K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM1200HC-50H
OCR Text hvigbt MODULES CM1200HC-50H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-50H q IC................................................................ 1200A q VCES ......
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 57.06K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM1200HC-66H
OCR Text hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI hvigbt MODULES CM1200HC-...
Description HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (hvigbt) Modules

File Size 52.44K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM400DY-50H
OCR Text hvigbt MODULES CM400DY-50H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H q IC...................................................................400A q VCES .......
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 42.83K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM400DY-66H
OCR Text hvigbt MODULES CM400DY-66H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H q IC...................................................................400A q VCES .......
Description HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT

File Size 42.85K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM400HB-90H
OCR Text hvigbt 400 Amperes/4500 Volts A D L S Y N L V NUTS (4 TYP) P F CM C C G E B E E Q C E G R T U NUTS (3 TYP) J K M H W (6 TYP) X C Description: Powerex IGBTMODTM Modules are designed for use ...
Description Single IGBTMOD?/a> hvigbt 400 Amperes/4500 Volts
Single IGBTMOD⑩ hvigbt 400 Amperes/4500 Volts
Single IGBTMOD hvigbt 400 Amperes/4500 Volts
Single IGBTMODhvigbt 400 Amperes/4500 Volts

File Size 63.92K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM600E2Y-34H
OCR Text hvigbt MODULES CM600E2Y-34H hvigbt (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H q IC...................................................................600A q VCES .....
Description HIGH POWER SWITCHING USE INSULATED TYPE 600 A, 1700 V, N-CHANNEL IGBT

File Size 44.60K  /  4 Page

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