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halfwave Datasheet PDF File

For halfwave Found Datasheets File :: 1739 Search Time::0.797ms
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				INFINEON[Infineon Technologies AG]
Part No.	IHW20T120
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 1200 40 20 Unit V A ICpuls IF 60 60 23...
Description	IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack Soft Switching Series
File Size	316.12K / 14 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MCR08BT1
OCR Text	... ( C) 1.0 cm2 FOIL, 50 OR 60 Hz halfwave 180 80 70 60 50 40 30 = CONDUCTION ANGLE 110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 50 OR 60 Hz halfwave 90 80 70 60 50 40 30 20 0 0.1 0.2 0.3 0.4 0.5 120 = 30 60 90 dc 180 ANGL...
Description	SCR 0.8 AMPERE RMS 200 THRU 600 VOLTS
File Size	293.79K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D
OCR Text	... ( C) 1.0 cm2 FOIL, 50 OR 60 Hz halfwave 180 80 70 60 50 40 30 = CONDUCTION ANGLE 110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 50 OR 60 Hz halfwave 90 80 70 60 50 40 30 20 0 0.1 0.2 0.3 0.4 0.5 120 = 30 60 90 dc 180 ANGL...
Description	Sensiteve Gate Silicon Controlled Rectifier Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
File Size	254.48K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N120R2
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	372.50K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N120R
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	354.90K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW15N120R2
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	361.77K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW15N120R
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	367.22K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW30N120R2
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	383.17K / 12 Page	View it Online	Download Datasheet


Part No.	HSTN3-925S HSTN3-2400S PSTN2-915S
OCR Text	...2 series uses an end-fed loaded halfwave design. these also do not require a groundplane to achieve proper resonance. this halfwave design uses a helically loaded element. this reduces the size of the up to 2.5 dbi gain (max) styles with ...
Description	MOBILE STATION ANTENNA
File Size	35.56K / 1 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW30N120R
OCR Text	...Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage ...
Description	IGBT with monolithic body diode for soft switching Applications
File Size	1,001.42K / 12 Page	View it Online	Download Datasheet

For halfwave Found Datasheets File :: 1739 Search Time::0.797ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |