ghz-2.655 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 268 Search Time::3.984ms
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				OKI electronic componet... OKI[OKI electronic componets] OKI electronic eomponets
Part No.	KGF1323
OCR Text	...= 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 electronic components KGF1323 Test Circuit and Bias Configuration for KGF1323...2) (3) T3 T4 RFC OUT CC C2 C3 C4 f = 850 MHz T1: Z0 = 50 W, E = 28.5 deg T2:...
Description	From old datasheet system Power FET(Plastic Package Type)
File Size	81.61K / 7 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2014AN SGM2014
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [GHz] 0 -3- Ga - Gain [dB] 2.0 20 2.0 20 SGM2014AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ...
Description	GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
File Size	55.59K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2014 SGM2014AM
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [GHz] 0 -3- Ga - Gain [dB] 2.0 20 2.0 20 SGM2014AM S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ...
Description	GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
File Size	50.04K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA807 UPA807T UPA807T-T1
OCR Text	...P. @VCE = 2 V, IC = 7 mA, f = 2 GHz \|S21e\|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz * A Super Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC5179) 2.00.2 PACKAGE DRAWINGS (Unit: mm) 2.10.1 1.250.1 1.3 ORDERING ...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
File Size	55.47K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT32032 AT-32032-BLK AT-32032-TR1
OCR Text	...t Conditions Noise Figure f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Associated Gain f=0.9 GHz VCE=2.7V, IC=5mA f=1.8 GHz Forward Current Transfer Ratio VCE=2.7V, IC=5mA Collector Cutoff Current VCB=3V Emitter Cutoff Current VEB=1V Units dB dB Mi...
Description	AT32032
File Size	163.29K / 14 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral ...2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteris...
Description	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA800T UPA800T-T1 UPA800T-KB
OCR Text	...n \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA * A Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC4228) 2.00.2 2 3 0.7 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm...
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	47.29K / 6 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text	... High fT * Low Cre * High : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz) 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) 1 \|S21e\|2 : * Super Mini Mold Package. (EIAJ: SC-70) 0.9...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	47.68K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA831 UPA831TC UPA831TC-T1 UPA831TC-A
OCR Text	...., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA * High gain Q1 : \|S21e\|2 = 9.0 dB TYP., Q2 : \|S21e\|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA * Flat-lead 6-pin thin-type ultra super minimold package * 2 different built-in t...
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
File Size	77.29K / 16 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2
OCR Text	GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The PC1679G is a silicon monolithic integrated circuit designed as medium output power amplif...2.5 kp/reel. Embossed tape 12 mm wide. 1 pin is tape roll-in direction. Qty 2.5 kp/reel. PC1679G-...
Description	5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER 5伏偏置，5.5 dBm的输出，1.8 GHz的宽频带泗MMIC放大
File Size	71.65K / 12 Page	View it Online	Download Datasheet

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