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gate-emitter Datasheet PDF File

For gate-emitter Found Datasheets File :: 9874 Search Time::2.906ms
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				Fuji Electric
Part No.	6MBI100U4B-120
OCR Text	...Items Collector-Emitter voltage gate-emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25 C Tc=80oC o Tc=25 C Tc=80oC o o Conditions 1ms Collector Power Dissipation 1 device Junc...
Description	IGBT MODULE
File Size	462.94K / 13 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...ector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2701-A67 1700V 72A VCE VCGR VGE IC RGE = 20 k gate-emitter voltage DC collector current ...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	...he same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a sta...Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...ent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...ent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...ent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...ent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGR2B60KDPBF IRGR2B60KDTRPBF IRGR2B60KDTRRPBF IRGR2B60KDTRLPBF IRGR2B60KDPBF-15
OCR Text	gate collector emitter base part number package type standard pack orderable part number form quantity irgr2b60kdpbf d-pak tube 75 irgr2b60kdpbf tape and reel 2000 irgr2b60kdtrpbf tape and reel left 3000 irgr2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
File Size	750.99K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGW25N120
OCR Text	...ating area VCE 1200V, Tj 150C gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Solderin...
Description	IGBTs & DuoPacks - 25A 1200V TO247AC IGBT Fast IGBT in NPT-technology TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
File Size	375.62K / 11 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGF330A60D3G
OCR Text	...ent t c = 25c 800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1560 w rbsoa reverse bias safe operating area t j = 125c 800a @ 520v these devices are sens...
Description	Phase leg NPT IGBT Power Module
File Size	208.77K / 5 Page	View it Online	Download Datasheet

For gate-emitter Found Datasheets File :: 9874 Search Time::2.906ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |