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  field-mounting Datasheet PDF File

For field-mounting Found Datasheets File :: 5549    Search Time::0.938ms    
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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...ION N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. Applications:* d.c. to d.c. c...mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air TYP....
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    UPD16510 UPD16510GR-8JG

http://
NEC[NEC]
NEC Corp.
Part No. UPD16510 UPD16510GR-8JG
OCR Text ...NDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and ...
Description VERTICAL DRIVER FOR CCD SENSOR

File Size 69.06K  /  16 Page

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    UPD16655 UPD16655N UPD16655N-XXX

NEC Corp.
NEC[NEC]
Part No. UPD16655 UPD16655N UPD16655N-XXX
OCR Text ...ONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and ...
Description LIQUID CRYSTAL DISPLAY DRIVER, UUC251
LCD Display Driver
240-OUTPUT TFT-LCD GATE DRIVER

File Size 69.71K  /  12 Page

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    UPD3753 UPD3753CY

NEC[NEC]
Part No. UPD3753 UPD3753CY
OCR Text ...NDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and ...
Description 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT

File Size 220.64K  /  16 Page

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    UPD6464A UPD6464ACS UPD6464AGT UPD6465 UPD6465CS UPD6465GT UPD6464ACS-XXX UPD6464AGT-XXX UPD6465CS-XXX UPD6465GT-XXX

NEC[NEC]
Part No. UPD6464A UPD6464ACS UPD6464AGT UPD6465 UPD6465CS UPD6465GT UPD6464ACS-XXX UPD6464AGT-XXX UPD6465CS-XXX UPD6465GT-XXX
OCR Text ... option. 1 dot/1 line. 2 lines (field) can be displayed in line units. White (single color) No background, black framing, black-on-white, and black filling 12 (horizontal) x 18 (vertical) dots without gap between adjacent characters Blinkin...
Description 256-character OSD for VCR
128-character OSD(low-cost version) for VTR
ON-SCREEN CHARACTER DISPLAY CMOS LSI FOR 12-LINE, 24-COLUMN DECK-TYPE VCR

File Size 555.47K  /  52 Page

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    12H1601-2R 24H1601-2R 48H1601-2R 24H2320-2 48H3040-2 12H1001-2R 12H1301-2R 12H1501-2R 12H1901-2R 12H2320-2 12H2540-2 12H

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POWER-ONE[Power-One]
Jameco Electronics
Part No. 12H1601-2R 24H1601-2R 48H1601-2R 24H2320-2 48H3040-2 12H1001-2R 12H1301-2R 12H1501-2R 12H1901-2R 12H2320-2 12H2540-2 12H3020-2 12H3040-2 24H1001-2R 24H1301-2R 24H1501-2R 24H1901-2R 24H2540-2 24H3020-2 24H3040-2 48H1001-2R 48H1301-2R 48H1501-2R 48H1901-2R 48H2320-2 48H2540-2 48H3020-2
OCR Text ...tatic discharge Electromagnetic field Electr. fast transients/bursts Surge Electromagnetic emissions 50 Watt DC-DC Converters IEC/EN 610...mounting plates for frontal access Universal mounting brackets for chassis or DIN-rail mounting P...
Description 50WattDC-DCConverters
Shielded Paired Cable; Number of Conductors:6; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Number of Pairs:3; Features:Aluminium Foil/Polyester Tape; Temperature Max:200 C; Voltage Nom.:300V RoHS Compliant: Yes
Shielded Paired Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Shielding Material:Aluminum Foil/Polyester Tape; Number of Pairs:5; Leaded Process Compatible:Yes RoHS Compliant: Yes
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Shielding Material:Aluminum Foil/Polyester Tape; Number of Pairs:4; Leaded Process Compatible:Yes RoHS Compliant: Yes
Shielded Paired Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Number of Pairs:5; Leaded Process Compatible:Yes; Features:Aluminium Foil/Polyester Tape RoHS Compliant: Yes
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Number of Pairs:4; Leaded Process Compatible:Yes; Features:Aluminium Foil/Polyester Tape RoHS Compliant: Yes
CAP, 100PF 50V 10% X7R, 0603
SMD,CAP,CERA,0.01UF,0603 50V, X7R, 10%
Paired, Cable, Number Of Pairs 2 RoHS Compliant: Yes 50瓦的DC - DC转换
50 Watt DC-DC Converters 50瓦的DC - DC转换
Paired Cable; Number of Conductors:2; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:FEP; Number of Pairs:1; Features:Unshielded; Impedance:72ohm; Temperature Max:200 C; Voltage Nom.:300V RoHS Compliant: Yes

File Size 139.10K  /  4 Page

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    2SJ243 D11215EJ1V0DS00

NEC Corp.
Part No. 2SJ243 D11215EJ1V0DS00
OCR Text FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 ...mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturi...
Description From old datasheet system
P-CHANNEL MOS FET FOR SWITCHING

File Size 58.34K  /  6 Page

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    2SJ353 2SJ353-T D11216EJ1V0DS00

NEC[NEC]
Part No. 2SJ353 2SJ353-T D11216EJ1V0DS00
OCR Text FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is...mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor select...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60

File Size 55.23K  /  6 Page

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    2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00

NEC[NEC]
Part No. 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is a swi...mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor select...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)

File Size 64.46K  /  6 Page

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    2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00

NEC[NEC]
Part No. 2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is...mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor select...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOSFET

File Size 65.63K  /  6 Page

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For field-mounting Found Datasheets File :: 5549    Search Time::0.938ms    
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