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				Analog Devices
Part No.	ADUM3201ARWZ ADUM1201ARWZ ADUM3402CRWZ ADUM3100ARWZ ADUM1100ARWZ ADUM1402CRWZ ADUM1301BRWZ ADUM3301BRWZ
OCR Text	...to address conditions typically endured during com - ponent handling and assembly. system-level testing seeks to address conditions typically endured during system operation. ? the specifc conditions a component is subjected to...
Description	ESD/Latch-Up Considerations with iCoupler? Isolation Products
File Size	199.59K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CT20AS-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=400F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	Multipole Connector 频闪闪光器使 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	30.40K / 2 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CT20ASJ-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=400F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	30.15K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT20ASL-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=400F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	STROBE FLASHER USE 频闪闪光器使
File Size	22.67K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] POWEREX[Powerex Power Semiconductors]
Part No.	CT35SM-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 200A : full luminescence condition) of main condenser (CM=1000F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total oper...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	33.67K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT20VM-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=800F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	STROBE FLASHER USE
File Size	23.73K / 2 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
Part No.	CY25BAH-8F CY25BAH-8F-T13
OCR Text	...4. The operation life should be endured 5,000 shots under the charge current (IXe 150 A : full luminescence condition) of main capacitor (CM = 400 F) which can endure repeated discharge of 5,000 times. Repetition period under full luminesc...
Description	D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No NCH IGBT FOR STROBE FLASHER Transistors>IGBT>for Stlobe use
File Size	171.10K / 5 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. Sanyo Semicon Device
Part No.	LE28DW1621T-80T LE28DW1621T
OCR Text	... number of Erase/Program cycles endured. Either Flash bank may be read to another Flash Bank during the internally controlled write cycle. The device is always in the Software Data Protected mode for all Write operations Write operations ar...
Description	16 Megabit FlashBank Memory 16兆位内存FlashBank
File Size	344.25K / 20 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	LE28DW8102T LE28DW8102T-90
OCR Text	... number of Erase/Program cycles endured. Either Flash bank may be read to another Flash Bank during the internally controlled write cycle. The device is always in the Software Data Protected mode for all Write operations Write operations ar...
Description	8 Megabit FlashBank Memory LE28DW8102T 8FlashBank内存LE28DW8102T EEPROM EEPROM
File Size	335.74K / 19 Page	View it Online	Download Datasheet

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