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  ds-308 Datasheet PDF File

For ds-308 Found Datasheets File :: 309    Search Time::3.11ms    
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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...acteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 77A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 1.5 100 1.0 0.5 10 3.0 V DS = 15V 20s PULSE WIDTH 6.0 7.0 ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...Features * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P ...308 125 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
OCR Text ... Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. R...308 0.317 0.112 Tj P tot (t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr /dt ...
Description Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

File Size 370.24K  /  14 Page

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    SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5

http://
INFINEON[Infineon Technologies AG]
Part No. SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5
OCR Text ... Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol min. R...308 0.317 0.112 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

File Size 328.57K  /  12 Page

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    SPD07N60C3 SPU07N60C3

INFINEON[Infineon Technologies AG]
Part No. SPD07N60C3 SPU07N60C3
OCR Text ...r Drain Source voltage slope V DS = 480 V, I D = 7.3 A, Tj = 125 C SPD07N60C3 SPU07N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Cha...308 0.317 0.112 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 Unit Symbol...
Description Cool MOS& Power Transistor
Cool MOS™ Power Transistor
Cool MOS Power Transistor

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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ... Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Pa...308 0.317 0.112 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 0.0004578 0.000645 ...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 259.07K  /  11 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...0 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Vol...308 1.3 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...0 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Vol...308 1.3 5 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = ...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ...0 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Vol...308 1.3 880 31 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.]...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ...0 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Vol...308 1.3 5 300 600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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For ds-308 Found Datasheets File :: 309    Search Time::3.11ms    
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