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  dll Datasheet PDF File

For dll Found Datasheets File :: 2926    Search Time::1.64ms    
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    V58C265164S

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V58C265164S
OCR Text ... active on both edges I On-Chip dll aligns DQ and DQs transitions with CLK transitions I Differential clock inputs CLK and CLK I Power supply 2.5V 0.2V Description The V58C265164S is a four bank DDR DRAM organized as 4 banks x 1Mbit x ...
Description 64 Mbit DDR SDRAM 2.5 VOLT 4M X 16

File Size 448.59K  /  44 Page

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    V58C265404S

MOSEL[Mosel Vitelic, Corp]
Part No. V58C265404S
OCR Text ... active on both edges s On-Chip dll aligns DQ and DQs transitions with CLK transitions s Differential clock inputs CLK and CLK s Power supply 2.5V 0.2V Description The V58C265404S is a four bank DDR DRAM organized as 4 banks x 4Mbit x ...
Description HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4

File Size 389.22K  /  44 Page

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    V58C265804S

MOSEL[Mosel Vitelic, Corp]
Part No. V58C265804S
OCR Text ... active on both edges s On-Chip dll aligns DQ and DQs transitions with CLK transitions s Differential clock inputs CLK and CLK s Power Supply 2.5V 0.2V Description The V58C265804S is a four bank DDR DRAM organized as 4 banks x 2Mbit x ...
Description HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8

File Size 455.31K  /  44 Page

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    Nanya Techology
Part No. NT5DS32M4AT
OCR Text ...data mask (dm) for write data ? dll aligns dq and dqs transitions with ck transitions, also aligns qfc transitions with ck during read cycles ? commands entered on each positive ck edge; data and data mask referenced to both edges of dq...
Description (NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM

File Size 1,559.58K  /  76 Page

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    V58C365164S

Mosel Vitelic Corp
Mosel Vitelic, Corp
Part No. V58C365164S
OCR Text ..., active on both edges On-Chip dll aligns DQ and DQs transitions with CLK transitions Differential clock inputs CLK and CLK Power supply 3.3V 0.3V VDDQ (I/O) power supply 2.5 + 0.2V Description The V58C365164S is a four bank DDR DR...
Description 64 Mbit DDR SDRAM 4M X 16, 3.3VOLT

File Size 500.70K  /  44 Page

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    VG37648041AT

VML[Vanguard International Semiconductor]
Part No. VG37648041AT
OCR Text ... in this data sheet are for the dll Enabled mode of operation. This is the only normal operating Features * Double-data-rate architecture: two data transfers per clock cycle * Bidirectional, intermittent data strobe (DQS) is transmitt...
Description 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM

File Size 963.00K  /  86 Page

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Part No. MT47H64M4BG-37E
OCR Text ... option for x8 configuration  dll to align dq and dqs transitions with ck  four internal banks for concurrent operation  programmable cas latency (cl): 3 and 4  posted cas additive latency (al): 0, 1, 2, 3, and 4  write latency = read...
Description 64M X 4 DDR DRAM, 0.5 ns, PBGA84

File Size 7,755.37K  /  104 Page

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    PROMOS TECHNOLOGIES INC
Part No. V59C1512804QBF37
OCR Text ...s an optional feature) on-chip dll aligns dq and dqs transitions with ck transitions differential clock inputs ck and ck jedec power supply 1.8v 0.1v vddq=1.8v 0.1v available in 60-ball fbga for x4 and x8 component or 84 ball fbga...
Description 64M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,189.75K  /  76 Page

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    K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
Part No. K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
OCR Text ... Bi-directional Data Strobe and dll FEATURES * 2.5V + 5% power supply for device operation * 2.5V + 5% power supply for I/O interface * SSTL_2 compatible inputs/outputs * 4 banks operation * MRS cycle with address key programs -. Read late...
Description 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

File Size 223.53K  /  18 Page

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    K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text ... Bi-directional Data Strobe and dll FEATURES * 2.6V + 0.1V power supply for device operation * 2.6V + 0.1V power supply for I/O interface * SSTL_2 compatible inputs/outputs * 4 banks operation * MRS cycle with address key programs -. Read ...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 204.60K  /  16 Page

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