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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM600DCM17-A000
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| OCR Text |
...nd single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse ... |
| Description |
IGBT Chopper Module
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| File Size |
180.92K /
11 Page |
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it Online |
Download Datasheet
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DYNEX[Dynex Semiconductor]
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| Part No. |
DIM600BSS12-A000
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| OCR Text |
...rectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide r... |
| Description |
Single Switch IGBT Module
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| File Size |
157.74K /
9 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DIM375WKS06-S000 DIM375WKS06-S
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| OCR Text |
...nd single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM375WKS06-S000 is a 600V n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm ... |
| Description |
IGBT Modules - Chopper
IGBT Chopper Module (Upper Arm Control)
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| File Size |
144.59K /
8 Page |
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Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DIM375WHS06-S000 DIM375WHS06-S
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| OCR Text |
...nd single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM375WHS06-S000 is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for... |
| Description |
IGBT Modules - Half Bridge
Half Bridge IGBT Module
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| File Size |
146.75K /
8 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
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| Part No. |
DIM1200ESM33-A000 ESM33-A000
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| OCR Text |
...nd single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200ESM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide ... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
194.37K /
10 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
... is overlaid on the insulation, covering the entire channel region and, simultaneously, metal contacts to the drain and source are made as shown in Figure 4d. The contact to the metal area covering the channel is the gate terminal. Note tha... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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