| |
|
 |
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTD5P06V ON2511 MTD5P06V-T4
|
| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system
|
| File Size |
244.68K /
10 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
|
| Part No. |
MTY55N20E MTY55N20E_D ON2720
|
| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
| File Size |
231.14K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
ETC
Motorola, Inc
ON Semiconductor
|
| Part No. |
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
|
| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
| File Size |
275.97K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
