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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM600HA-5F
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Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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File Size |
51.12K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
CM600HA-5F
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Description |
HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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File Size |
45.01K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
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Part No. |
CM600HA-28H
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Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
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File Size |
48.90K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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Part: CM600HA-24H |
Maker: MITSUBIS.. |
Pack: 模块 |
Stock: Reserved |
Unit price
for : |
50: $141.41 |
100: $134.34 |
1000:
$127.27 |
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