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For breakdown Found Datasheets File :: 95278    Search Time::3.093ms    
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    2SB827

WINGS[Wing Shing Computer Components]
Part No. 2SB827
OCR Text ... Characteristic Collector Base breakdown Voltage Collector Emitter breakdown Voltage Emitter Base breakdown Voltage Collector Cutoff Current Emitter Cutoff Current *DC Current Gain Collector- Emitter Saturation Voltage Symbol BVCBO BVCE...
Description PNP PLANAR SILICON TRANSISTOR

File Size 47.35K  /  1 Page

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    2SB831

HITACHI[Hitachi Semiconductor]
Part No. 2SB831
OCR Text ... = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Sy...
Description    Silicon PNP Epitaxial

File Size 24.11K  /  5 Page

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    2SB857 2SB858

HITACHI[Hitachi Semiconductor]
Part No. 2SB857 2SB858
OCR Text ... 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max -- -- -- -1 320 -- -1 -1 -- Min -70...
Description Silicon PNP Transistor
Silicon PNP Triple Diffused

File Size 31.80K  /  5 Page

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    SamHop
Part No. STB60L60A
OCR Text ...rameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =20a 20 22 30 m ohm b f=1.0mhz b v ds =15v,i d =25a, v gs =10v drain-source diode characteristics v g...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 277.41K  /  8 Page

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    FQP20N06 FQP20N06TSTU

Fairchild Semiconductor
Part No. FQP20N06 FQP20N06TSTU
OCR Text ...acteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.07 -- v/c i dss zero gate voltage drain current v...
Description N-Channel QFET MOSFET 60 V, 20 A, 60 m

File Size 664.67K  /  8 Page

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Part No. IRHLUB7930Z4
OCR Text ...nditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown ? -0.055 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ?...
Description 530 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 201.46K  /  10 Page

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    2SC2732

HITACHI[Hitachi Semiconductor]
Part No. 2SC2732
OCR Text ... = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 -- -- 30 700 -- -- Typ -- -- -- -- -- 60 1000 0.5 7.0 Max -- -- -- 0.5 5 -- -- 0.8 -- MHz pF dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 35.50K  /  7 Page

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    2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662

ROHM[Rohm]
Part No. 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text ...=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SC5662, 2SC...
Description High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)

File Size 61.54K  /  2 Page

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For breakdown Found Datasheets File :: 95278    Search Time::3.093ms    
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