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Dynex Semiconductor, Ltd.
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| Part No. |
DFM1200FXM18-A
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| OCR Text |
...itions i f = 1200a, di f /dt = 8000a/ s, v r = 900v parameter peak reverse recovery current reverse recovery charge reverse recovery energy symbol i rr q rr e rec units a c mj max. - - - typ. 880 320 240 min. - - - dynamic electrical ch... |
| Description |
Fast Recovery Diode Modules - Dual Diode 快恢复二极管模块-双二极管
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| File Size |
114.27K /
7 Page |
 View
it Online |
Download Datasheet
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DFM1200FXM18-A000
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| OCR Text |
...Conditions IF = 1200A, dIF/dt = 8000a/s, VR = 900V Min. Typ. 880 320 240 Max. Units A C mJ
Tvj = 125C unless stated otherwise. Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Te... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
99.61K /
7 Page |
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it Online |
Download Datasheet |
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Altera Corporation
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| Part No. |
EPC2LI20 EPC1441PI8 EPC2 EPC8
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| OCR Text |
...5.0 V) / EPF6016A EPF6024A FLEX 8000a (5.0 V) EPF8282A / EPF8282AV (3.3 V) EPF8452A EPF8636A EPF8820A EPF81188A EPF1500A
EPF10K100B 1,2000,000
398,000 40,000 1 1
1 1
1 1
64,000 96,000 128,000 192,000 250,000
1
1 1 1 1
... |
| Description |
Configuration Devices For SRAM-based Lut Devices, 440,800 1-bit Device With 5.0-V or 3.3-V Operation
Configuration Device Family
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| File Size |
248.36K /
36 Page |
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it Online |
Download Datasheet |
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