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556 Datasheet PDF File

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				ON Semiconductor
Part No.	BAL99LT1-D
OCR Text	...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t...
Description	Switching Diode
File Size	43.13K / 4 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp.
Part No.	CY7C1062AV33-12BGC
OCR Text	...s t hzoe oe high to high-z [8] 556 ns t lzce ce 1 , ce 2 , or ce 3 low to low-z [8] 333 ns t hzce ce 1 , ce 2 , or ce 3 high to high-z [8] 556 ns t pu ce 1 , ce 2 , or ce 3 low to power-up [9] 000 ns t pd ce 1 , ce 2 , or ce 3 ...
Description	512K x 32 Static RAM
File Size	300.43K / 9 Page	View it Online	Download Datasheet

				TAI-SAW TECHNOLOGY CO., LTD.
Part No.	TC0153A
OCR Text	...roduct name: saw resonator 801.556 mhz smd 3.8x3.8 mm tst parts no.: tc0153a customer parts no.: company: division: ...
Description	SAW Resonator 801.556 MHz SMD 3.8X3.8 mm
File Size	311.22K / 4 Page	View it Online	Download Datasheet

				Micronas
Part No.	HAL560UA-K HAL560UA-E HAL556UA-E HAL566UA-E HAL556UA-K HAL566UA-K HAL556SF-K HAL560SF-K HAL566SF-K HAL566SF-E HAL560SF-E
OCR Text	556, hal 560, hal 566 edition aug. 11, 2009 dsh000026_004en data sheet hal55x, hal56x data sheet 2 aug. 11, 2009; dsh000026_004en micronas copyright, warranty, and limitation of liability the information and data contained in this documen...
Description	Two-Wire Hall-Effect Sensor Family
File Size	797.69K / 26 Page	View it Online	Download Datasheet

				Continental Device India Li...
Part No.	BCW66G BCW66F
OCR Text	...om junction to ambient r th j?a 556 556 556 c/mw characteristics (at t a = 25c unless otherwise specified) collector?emitter breakdown voltage ?i c = 10 ma; i b = 0 ?v (br)ceo min. 45 45 45 v collector?emitter breakdown voltage ?i c = ...
Description	GENERAL PURPOSE TRANSISTOR
File Size	77.90K / 3 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBT5550LT1-D
OCR Text	...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t...
Description	High Voltage Transistors NPN Silicon
File Size	99.76K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBT5401LT1-D
OCR Text	...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t...
Description	High Voltage Transistor PNP Silicon
File Size	95.11K / 8 Page	View it Online	Download Datasheet

				Micronas Semiconductor Holding AG
Part No.	HAL560 HAL566 HAL560SF-K HAL566SF-K HAL560SF-A HAL566SF-A HAL566UA-A HAL566UA-K HAL560UA-A HAL566UA-E
OCR Text	...g behavior sensitivity see page 556 unipolar very high 12 560 unipolar inverted low 14 566 unipolar inverted very high 16 unipolar switching sensors: the sensor turns to high current consumption with the magnetic south pole on the branded ...
Description	Two-Wire Hall Effect Sensor Family 双线霍尔效应传感器系 Two-Wire Hall Effect Sensor Family MAGNETIC FIELD SENSOR-HALL EFFECT, 46-52mT, RECTANGULAR, THROUGH HOLE MOUNT
File Size	221.20K / 21 Page	View it Online	Download Datasheet

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