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  2banks Datasheet PDF File

For 2banks Found Datasheets File :: 170    Search Time::5.25ms    
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    K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80

Samsung Electronic
Samsung semiconductor
Part No. K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80
OCR Text ...are stable Io = 0 mA Page Burst 2banks Activated tCCD = 2CLKs 3 2 3 Refresh Current ICC5 tRCtRC(min) 2 Self Refresh Current ICC6 CKE0.2V 155 105 150 100 CAS Latency 3 2 CMOS SDRAM Version Unit Note -55 120 -60 115 -70 105 110 2 mA 2 1...
Description 512K x 16Bit x 2 Banks Synchronous DRAM

File Size 1,075.41K  /  41 Page

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    HY5Y6B6DLF-HF HY5Y6B6DLF-PF HY5Y6B6DLFP-HF HY5Y6B6DLFP-PF

Hynix Semiconductor
Part No. HY5Y6B6DLF-HF HY5Y6B6DLF-PF HY5Y6B6DLFP-HF HY5Y6B6DLFP-PF
OCR Text ...arter bank, a half bank, 1bank, 2banks, or all banks. The Hynix HY5Y6B6DLF(P) has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal temperature se...
Description 4Banks x1M x 16bits Synchronous DRAM

File Size 320.67K  /  27 Page

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    DSK4S161622D K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK4S161622D K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 K4S161622D-TI_E80 DS_K4S161622D K4S161622D-TI_E10 K4S161622D-TI_E50 K4S161622D-TI_E55 K4S161622D-TI_E60 K4S161622D-TI_E70
OCR Text ...are stable Io = 0 mA Page Burst 2banks Activated tCCD = 2CLKs 3 2 3 Refresh Current Self Refresh Current ICC5 ICC6 tRCtRC(min) 2 CKE0.2V 1 90 90 80 mA CAS Latency -50 3 2 Version Unit Note -55 -60 -70 -80 95 95 -10 85 mA 2 mA 2 15 mA 5 3 mA...
Description 1M x 16 SDRAM

File Size 677.20K  /  43 Page

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    SAMSUNG
Part No. KM44S16030 KM44S16030CT
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V mA Operating current (Burst mode) Refresh current Self refresh current ICC4 ICC5 ICC6 Notes : 1. Measured with outputs open. 2. Refresh per...
Description 4M x 4Bit x 4 Banks Synchronous DRAM

File Size 81.33K  /  8 Page

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    M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG M52D16161A-6TIG M52D16161A-7.5BIG M52D16161A-7.5TIG M52D16161A1 M52D16

Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
Part No. M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG M52D16161A-6TIG M52D16161A-7.5BIG M52D16161A-7.5TIG M52D16161A1 M52D16161A-1
OCR Text 2banks Mobile Synchronous DRAM FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequent...
Description 512K x 16Bit x 2banks Mobile Synchronous DRAM

File Size 891.50K  /  32 Page

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    HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6DLFP-BE

Hynix Semiconductor
http://
Part No. HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6DLFP-BE
OCR Text ...arter bank, a half bank, 1bank, 2banks, or all banks. The Hynix HY5S2B6DLF(P) series has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal tempera...
Description 4Banks x 2M x 16bits Synchronous DRAM

File Size 220.81K  /  26 Page

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    M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A

Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
Part No. M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A
OCR Text 2banks Mobile Synchronous DRAM FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (1, 2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequ...
Description 512K x 16Bit x 2banks Mobile Synchronous DRAM

File Size 875.12K  /  32 Page

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    M52D32162A-7BG M52D32162A-7TG M52D32162A09 M52D32162A-10TG M52D32162A-10BG

Elite Semiconductor Memory Technology Inc.
Part No. M52D32162A-7BG M52D32162A-7TG M52D32162A09 M52D32162A-10TG M52D32162A-10BG
OCR Text 2banks Mobile Synchronous DRAM FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequent...
Description 1M x 16Bit x 2banks Mobile Synchronous DRAM

File Size 811.03K  /  32 Page

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    M52S32162A-6BG M52S32162A-6TG M52S32162A08 M52S32162A-7.5BG M52S32162A-7.5TG M52S32162A-10TG M52S32162A-10BG

Elite Semiconductor Memory Technology Inc.
Part No. M52S32162A-6BG M52S32162A-6TG M52S32162A08 M52S32162A-7.5BG M52S32162A-7.5TG M52S32162A-10TG M52S32162A-10BG
OCR Text 2banks Mobile Synchronous DRAM FEATURES 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (1, 2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequ...
Description 1M x 16Bit x 2banks Mobile Synchronous DRAM

File Size 860.55K  /  30 Page

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    M12S16161A-15T M12S16161A-15TG

Elite Semiconductor Memory Technology Inc.
Part No. M12S16161A-15T M12S16161A-15TG
OCR Text 2banks Synchronous DRAM FEATURES 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (1, 2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequential ...
Description 512K x 16Bit x 2banks Synchronous DRAM

File Size 870.80K  /  28 Page

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For 2banks Found Datasheets File :: 170    Search Time::5.25ms    
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