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28m Datasheet PDF File

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				NTE[NTE Electronics]
Part No.	NTE6113 NTE6115 NTE6121
OCR Text	.... . . . . . . . . . . . . . . 0.28m Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA 1.045 (26.54) 2.290 (58.16) Dia Max .040 (1.01) .040 (1.01) 1.33...
Description	Industrial Rectifier 1200 Amp Industrial Rectifier, 1200 Amp
File Size	16.28K / 2 Page	View it Online	Download Datasheet

				Anpec Electronics, Corp. ANPEC[Anpec Electronics Coropration] ETC ANPEC Electronics Corporation
Part No.	APM9926 APM9926C APM9926CKC-TR APM9926COC-TR APM9926KC-TR APM9926OC-TR
OCR Text	28m(typ.) @ VGS=4.5V RDS(ON)=38m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages Applications * Power Management in Notebook Computer , Portable Equipment and Batter...
Description	RELAY OPTOMOS 170MA DP-NC 8-SMD N沟道增强型MOS N-Channel Enhancement Mode MOSFET N沟道增强型MOS
File Size	140.03K / 11 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC ALPHA & OMEGA Semiconductor
Part No.	AO3410
OCR Text	... (V) = 30V ID = 5.8 A RDS(ON) < 28m (VGS = 10V) RDS(ON) < 33m (VGS = 4.5V) RDS(ON) < 52m (VGS = 2.5V) RDS(ON) < 70m (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Paramet...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	163.14K / 2 Page	View it Online	Download Datasheet

				ETC
Part No.	AP9926EO
OCR Text	...DSS RDS(ON) S1 D1 G1 S1 20V 28m 4.6A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effe...
Description	Power MOSFETs from APEC provide the designer with the best combination of fast switching
File Size	74.38K / 5 Page	View it Online	Download Datasheet

				Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
Part No.	AP4501M
OCR Text	...ID P-CH BVDSS RDS(ON) ID 30V 28m 7A -30V 50m -5.3A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and...
Description	N AND P-CHANNEL ENHANCEMENT N和P沟道强化
File Size	111.47K / 11 Page	View it Online	Download Datasheet

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