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    550-018M2

Glenair, Inc.
Part No. 550-018M2
OCR Text ...* GLENDALE, CA 91201-2497 * 818-247-6000 * FAX 818-500-9912 www.glenair.com E-Mail: sales@glenair.com A-30 550-018 D-Subminiature Potting Split Backshell COMMON BACKSHELL DIMENSIONS Shell Size 1 2 3 4 5 6 Com'l Shell Size Ref E/09 A/...
Description D-Subminiature Potting Split Backshell

File Size 28.86K  /  2 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text 247 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM comb...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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    APT8043BLL APT8043SLL

ADPOW[Advanced Power Technology]
Part No. APT8043BLL APT8043SLL
OCR Text ...ain Current 1 BLL D3PAK TO-247 SLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25C unless otherwise specified. APT8043 UNIT Volts Amps 800 20 80 30 40 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text 247 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM comb...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ...Source Voltage BLL D3PAK TO-247 SLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25C unless otherwise specified. APT8052 UNIT Volts Amps Continuous Drain...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8056BVFR

ADPOW[Advanced Power Technology]
Part No. APT8056BVFR
OCR Text 247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster ...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8056BVR

ADPOW[Advanced Power Technology]
Part No. APT8056BVR
OCR Text ...ough optimized gate layout. TO-247 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volt...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065

ADPOW[Advanced Power Technology]
Part No. APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text 247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster ...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.14K  /  4 Page

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    APT8065BVR APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065BVR APT8065 APT8065AVR
OCR Text ...ough optimized gate layout. TO-247 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volt...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.69K  /  4 Page

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text 247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster ...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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