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  2157.5 Datasheet PDF File

For 2157.5 Found Datasheets File :: 193    Search Time::1.25ms    
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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ... Package Dimensions unit:mm 2157 [2SJ560] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage D...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

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    NX60TA-25SAA3-SP NX60TA-32SAA3-SP NX60TB-15SAA3-SP NX60TB-32SAA9-SP NX1-_CVCK-MP NX1-_CVCK-MP_01 NX1-15T-KT3K NX1-15T-KT

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HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
Part No. NX60TA-25SAA3-SP NX60TA-32SAA3-SP NX60TB-15SAA3-SP NX60TB-32SAA9-SP NX1-_CVCK-MP NX1-_CVCK-MP_01 NX1-15T-KT3K NX1-15T-KT9K NX1-25T-KT3K NX1-25T-KT9K NX1-32T-KT3K NX1-32T-KT9K NX1BL-15T-KT3B NX1BL-15T-KT9B NX1BL-25T-KT3B NX1BL-25T-KT9B NX1BL-32T-KT3B NX1BL-32T-KT9B NX60TA-25SAA9-SP NX60TB-15SAA9-SP NX1-/CVCK-MP NX1-/CVCK-MP01
OCR Text ...154-9-** NX1BL-25T-KT9B(**) 234-2157-7-** NX1BL-25T-KT3B(**) ____ ___ NX1BL-32T-KT9B(**) 234-2155-1-** NX1BL-32T-KT3B(**) 234-2156-4-** S...5 640-0901-2 640-0902-5 640-0901-2 640-0902-5 640-0901-2 CL No. 234-0097-6 234-0098-9 234-0107-8...
Description    Simple Assembly Type PC Card Frame Kits
122 x 32 pixel format, Compact LCD size
122 x 32 pixel format, LED or EL Backlight available
Connector assemblies, Keyboard Computer cables; RoHS Compliant: Yes
Keyboard Molded Cable Assembly; Connector Type A:ModConnector Type B:Modular Plug; Cable Length:1.25ft; Process Compatible:Yes; Color:Black; Contact Material:Tinned Copper; No. Strands x Strand
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:17; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
TP-TX/FX-MM1300-ST MODULE2 KM 10/100 MBPS
Simple Assembly Type PC Card Frame Kits 简单的装配式框架套件PC

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    MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD...
Description RF POWER FIELD EFFECT TRANSISTORS

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    MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
Part No. MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD ...
Description RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET

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    MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD...
Description 2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors

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    MRF6S21100HR3 MRF6S21100HSR3

Freescale (Motorola)
Freescale Semiconductor, Inc
Part No. MRF6S21100HR3 MRF6S21100HSR3
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. ...
Description 2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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    Motorola
Part No. MRF6S21100H MOTOROLAINC-MRF6S21100HSR3
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. ...
Description 2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET 

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    Freescale Semiconductors
Part No. MRF6S21100NBR1 MRF6S21100N
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. PAR = 8...
Description  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz

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    MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230

MOTOROLA[Motorola, Inc]
Part No. MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. ...
Description MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers

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    LA1135 LA1135M

Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LA1135 LA1135M
OCR Text ...202(Mitsumi) 1-3 4-6 84T 17T 2157-2239-649 (Sumida) 7BRS-9286A (Toko) 13. The variations (especially in case of small coupling coeffic...5 Undesired input - dB 17. For details of the LA1135 wide-band AGC, refer to Technical Data No.7...
Description AM Tuner System for Car Radios and Home Stereos(应用于车载电台和家庭立体声的AM调谐 上午调谐器系统的汽车收音机和家庭音响(应用于车载电台和家庭立体声的上午调谐器
Monolithic Linear IC

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