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Microsemi, Corp.
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| Part No. |
2731-20
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| OCR Text |
...ur factory direct. 2731-20 20watts, 36 volts, 100us, 10% radar 2700-3100 mhz general description the 2731-20is an internally matched, common base bipolar transistor capable of providing 20watts of pulsed rf output power at 100 pu... |
| Description |
S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (µsec): 100; Duty Cycle (%): 10; Case Style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
59.19K /
3 Page |
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it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1001C
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| OCR Text |
...atch Tolerance MIN 16 60 TYP
20watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
32.92K /
2 Page |
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it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1001
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| OCR Text |
...atch Tolerance MIN 16 60 TYP
20watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.45K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1007
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| OCR Text |
...match Toleranc MIN 13 60 TYP
20watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.50K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1014
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| OCR Text |
...match Toleranc MIN 12 60 TYP
20watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.58K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1063
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| OCR Text |
...match Toleranc MIN 10 60 TYP
20watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
31.59K /
2 Page |
View
it Online |
Download Datasheet |
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