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PDI
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Part No. |
PEM01Q-1-AC1 PEM02Q-1-AC1 PEM02Q-1M-AC1
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OCR Text |
...vac 50hz: 0.45ma @ 115vac 60hz: 2 a* @ 250vac 50hz: 5 a* ? hipot rating (one minute) line to ground: 2250vdc line to line: 1450vdc ? tempe...4m; case c1, c2, c3 pdi p/n pem03q-4m-dc1 pem06q-4m-dc2 pem10q-4m-dc2 pem03q-4m-dc3 pdi p/n pem03q-4... |
Description |
MULTI-STAGE EMI/RFI LINE FILTER
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File Size |
262.35K /
6 Page |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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OCR Text |
...licon carbide (n/p-type)
page 2 ? effective december 1998 ? revised march 2003 properties and specifications for silicon carbide applicati...4m laser (6h only) 0.0055" 0.0015" 140.0m 38.0m 4h and 6h off-axis; semi-insulating 0.0145" 0.0... |
Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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Macronix 旺宏
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Part No. |
MX27C4111 27C4111
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OCR Text |
... OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21...4M BIT CELL MAXTRIX
VCC GND
P/N: PM0239
REV. 2.4, MAY 06, 1998
1
INDEX
MX27C4111
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Description |
4M-BIT [512K x8/256K x16] CMOS EPROM From old datasheet system
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File Size |
99.19K /
16 Page |
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it Online |
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Price and Availability
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