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2-16g1b Datasheet PDF File

For 2-16g1b Found Datasheets File :: 50 Search Time::1.313ms
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					TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7785-16UL
OCR Text	... mS 3600 V A V C/W -1.0 -5 -2.5 10.5 1.5 -4.0 14.0 1.8 Rth(c-c) Channel to Case The information contained herein is presented on...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm Gate Source Drain 20.40.3 0.1 -0.05 24.5 MAX. 1...
Description	MICROWAVE POWER GaAs FET
File Size	69.02K / 4 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	TIM5964-35SLA-251
OCR Text	...W -1.0 -5 TYP. MAX. 6500 -2.5 20 1.0 -4.0 26 1.3 The information contained herein is presented only as a guide for the applicatio...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm Gate Source Drain 2.60.3 20.40.3 0.1 -0.05 ...
Description	MICROWAVE POWER GaAs FET TIM5964-35SLA-251 From old datasheet system
File Size	36.69K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-16SL-341
OCR Text	... C/W MIN. -1.0 -5 TYP. 3200 -2.5 10.0 1.4 MAX. -4.0 2.0 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 5.2A VDS= 3V IDS=...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm Gate Source Drain 20.40.3 0.1 -0.05 24.5 MAX. 16....
Description	MICROWAVE POWER GaAs FET
File Size	69.40K / 4 Page	View it Online	Download Datasheet

					Pasternack Enterprises, Inc. Toshiba Semiconductor
Part No.	TIM5964-60SL
OCR Text	... -42 TYP. MAX. 48.0 8.5 13.2 41 -45 15.0 0.8 11.8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compress...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm ? ? Gate @ Source A Drain @ @ A 20.40....
Description	MICROWAVE POWER GaAs FET 微波功率GaAs场效应管
File Size	80.28K / 4 Page	View it Online	Download Datasheet

					TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7179-45SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 11.0A VDS= 3V IDS= ...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm ? ? Gate @ Source A Drain @ @ A 20.40....
Description	MICROWAVE POWER GaAs FET
File Size	79.75K / 4 Page	View it Online	Download Datasheet

					Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
Part No.	TIM6472-12UL
OCR Text	...Bm 40.5 8.5 -44 41.5 9.5 3.2 39 -47 3.2 3.8 0.6 3.8 80 f = 6.4 - 7.2GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELEC...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm Gate Source Drain 20.40.3 0.1 -0.05 24.5 MAX. 1...
Description	MICROWAVE POWER GaAs FET 微波功率GaAs场效应管
File Size	69.05K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5964-12UL
OCR Text	... -44 TYP. MAX. 41.5 10.0 3.2 40 -47 3.2 3.8 0.6 3.8 80 f = 5.9 to 6.4GHz add IM3 dBc A C Recommended gate resistance...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	44.44K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5053-16SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 3600 -2.5 10.5 1.5 MAX. -4.0 2.0 Gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS=...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description	MICROWAVE POWER GaAs FET
File Size	95.51K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5053-35SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 6500 -2.5 20.0 1.0 MAX. -4.0 1.3 gm VGSoff IDSS VGSO Rth(c-c) u The information contained herein is pre...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	349.27K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5964-30SL
OCR Text	... MIN. -1.0 -5 TYP. 6300 -2.5 18 1.0 MAX. -4.0 1.3 u The information contained herein is presented only as a guide for the a...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	173.43K / 4 Page	View it Online	Download Datasheet

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