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				MACOM[Tyco Electronics]
Part No.	AM50-0011 AM50-0011SMB AM50-0011TR AM50-0011TR3000
OCR Text	... -175.94 -177.82 -179.80 178.28 176.15 174.28 172.15 Mag 9.34 8.88 8.21 7.60 7.12 6.46 6.05 5.55 5.18 4.83 4.49 4.19 3.94 3.69 3.49 3.23 3.04 2.88 2.74 2.59 2.49 2.37 2.25 2.17 2.06 1.96 1.87 1.77 1.69 S21 Ang 154.18 142.56 134.07 125.78 11...
Description	Circular Connector; No. of Contacts:56; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No LJT 128C 128#22D SKT WALL RECP Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No High Dynamic Range LNA 800 - 1000 MHz
File Size	111.64K / 4 Page	View it Online	Download Datasheet

				Panasonic Corporation Panasonic Semiconductor
Part No.	AN8837SB
OCR Text	... 0.5 mV dB dB dB dB dB dB 176 mV[p-p] 0.4 -18 0.4 V V VNRF-H VCC = 3 V, f = 500 kHz VNRF-L VCC = 3 V, f = 500 kHz mV V V A V V VBDO-H f = 5 kHz, 170 mV[p-p], VCC = 3 V VBDO-L f = 5 kHz, 170 mV[p-p], VCC = 3 V 1.87 0.4 ...
Description	Low power consumption CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	68.71K / 7 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN8839 AN8839NSB
OCR Text	... - 0.6 1.0 mV dB dB dB A 176 mV[p-p] 0.4 -11 0.4 V V VNRF-H VCC = 3 V, f = 500 kHz VNRF-L VCC = 3 V, f = 500 kHz mV V V A V V VBDO-H f = 5 kHz, 170 mV[p-p], VCC = 3 V VBDO-L f = 5 kHz, 170 mV[p-p], VCC = 3 V 1.87 0.4 ...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	62.80K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...T CE MA AN OR DV NF A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Character...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...ED AT NC RM VA FO AD IN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteri...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...T CE MA AN OR DV NF A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Character...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...0JVFR UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature R...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...JVRU2 UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linea...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...JVRU3 UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linea...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...10JVR UNIT Volts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature R...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

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