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  16m-bit Datasheet PDF File

For 16m-bit Found Datasheets File :: 2586    Search Time::3.672ms    
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    HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V32220GU-7-C2 HYS64V32220GU-8-C2 HYS64V16300GU-75-C2 HYS64V32220GU-75-C2

Infineon Technologies AG
Infineon Technologies A...
Part No. HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V32220GU-7-C2 HYS64V32220GU-8-C2 HYS64V16300GU-75-C2 HYS64V32220GU-75-C2
OCR Text 16m x 64/72-bit 1 bank 128mbyte sdram module 3.3 v 32m x 64/72-bit 2 bank 256mbyte sdram module 168-pin unbuffered dimm modules description the hys 64(72)v16300gu and hys 64(72)v32220gu are industry-standard 168-pin 8-byte dual in-line memo...
Description    3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168

File Size 129.56K  /  20 Page

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    MSM5116400B

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM5116400B
OCR Text ... 550 mW 495 mW 440 mW 5.5 mW 16M 207 , MSM5116400B Semiconductor PIN CONFIGURATION (TOP VIEW) VCC 1 26 VSS VCC 1 26 VSS...bit locations. Since all 4 DQ pins are used, a total of 16 data bits can be written in parallel into...
Description 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 68.94K  /  8 Page

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    SIEMENS AG
Part No. HYS64V16220GCDL HYS64V4220GCDL HYS64V8220GCDL
OCR Text ...anization ? two bank 8m 64 and 16m 64 non-parity module organization ? suitable for use in pc100 and pc133 applications ? auto resingle ...bit) v cc v ss c 1 - c 4 d0-d3 d0-d3 note: all resistors are 10 w ldqm we we dqmb1 dq8-dq15 dq8-dq1...
Description 3.3V SDRAM Modules(3.3V SDRAM 模块) 3.3V的内存模块(3.3V的内存模块)

File Size 136.94K  /  18 Page

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    K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F280

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 0.2 Initial issue. K9F2808U0B(3.3V device)'s qualification is finished K9F2808Q0B (1.8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory

File Size 302.44K  /  29 Page

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    K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DIB0 K9F2816U0C-DCB0 K9F2816U0C-DIB0 K9F2816U0C-YCB0 K9F2816U0C-YIB0 K9F2G08Q0M K9F2808U0C-YCB0 K9F2808U0C-YIB0
OCR Text ...FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment o...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
16M x 8 bit NAND flash memory, 2.7 - 3.6V

File Size 579.95K  /  33 Page

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    K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) 500s(Max.) 2. Changed tBERS Parameter : 4ms(Max.) 3ms(Max.) 3. Changed Input and Output...
Description 16M x 8 Bit NAND Flash Memory

File Size 344.24K  /  26 Page

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    K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM...
Description 16M x 8 Bit NAND Flash Memory

File Size 351.20K  /  26 Page

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    LC78620E

Sanyo Semicon Device
Part No. LC78620E
OCR Text ...tor coupled EFMIN XIN, XOUT: In 16M mode XIN, XOUT: In 32M mode 16.9344 33.8688 400 1.0 1.0 10 min 4.5 0.7 VDD 0.6 VDD 0 0 400 400 400 400 0...Bit D/A Converter Analog Characteristics at Ta = 25C, VDD = LVDD = RVDD = 5 V, VSS = LVSS = RVSS = 0...
Description Compact Disc Player DSP
CMOS LSI

File Size 473.08K  /  34 Page

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    LC78621E 2069

SANYO[Sanyo Semicon Device]
Part No. LC78621E 2069
OCR Text ...tor coupled EFMIN XIN, XOUT: In 16M mode XIN, XOUT: In 32M mode 16.9344 33.8688 400 1.0 1.0 10 min 3.6 0.7 VDD 0.6 VDD 0 0 400 400 400 400 0...Bit D/A Converter Analog Characteristics at Ta = 25C, VDD = LVDD = RVDD = 5 V, VSS = LVSS = RVSS = 0...
Description Compact Disc Player DSP
CMOS LSI
From old datasheet system

File Size 413.22K  /  34 Page

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    LC78622E

SANYO[Sanyo Semicon Device]
Part No. LC78622E
OCR Text ...Y, PW, SFSY, WRQ, SQOUT, TST11, 16M, 4.2M, CONT1 to CONT5: IOH = -0.5 mA DOUT: IOH = -12 mA EFMO, CLV+, CLV-, V/P, PCK, FSEQ, TOFF, TGL, JP+...Bit D/A Converter Analog Characteristics at Ta = 25C, VDD = LVDD = RVDD = 5 V, VSS = LVSS = RVSS = 0...
Description Compact Disc Player DSP
CMOS LSI

File Size 375.08K  /  29 Page

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