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  133.34 Datasheet PDF File

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    2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text ...5 27.8 25.4 22.7 20.5 17.9 15.7 13.4 S22 ANG 61.8 51.3 48.6 48.6 49.5 50.7 51.0 51.8 52.2 52.5 52.7 52.6 52.1 51.9 51.1 50.6 49.8 48.9 4...334 2.202 2.093 1.994 1.902 1.828 1.749 1.681 1.616 1.562 1.507 1.453 1.409 1.360 1.327 MAG .034...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

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NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ...1.6 8.2 4.7 1.1 -3.1 -6.3 -9.8 -13.2 -16.7 -20.6 -24.0 -28.0 -31.5 -35.4 -39.3 -43.1 MAG 12.285 11.419 10.461 9.215 8.182 7.076 6.308 5.628 5.094 4.645 4.264 3.947 3.657 3.430 3.223 3.064 2.884 2.748 2.624 2.501 2.399 2.283 2.217 2.124 ...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...43.0 41.5 MAG 15.465 14.330 13.115 11.574 10.235 8.943 7.935 7.105 6.425 5.864 5.397 4.992 4.628 4.348 4.072 3.851 3.643 3.457 3.311 3.1...334 9.924 9.183 8.559 7.749 7.090 6.490 5.972 5.531 5.117 4.767 4.442 4.192 3.936 3.730 3.537 3.355 ...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...re |S21e|2 NF 11 50 120 6.5 0.5 13 1.1 2.0 0.9 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC ...334 20.817 14.898 11.390 9.247 7.798 6.768 5.913 5.293 4.789 4.345 3.959 3.669 3.443 3.203 2.999 2.8...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...ICBO IEBO hFE fT Cre |S21e|2 NF 13 50 100 9.0 0.25 15 1.2 2.5 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE...334 .317 .330 .313 .310 .297 .296 .311 .298 .287 .303 .290 .268 .273 .290 .269 .271 .273 .289 ANG...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ..., ISD = 8.1A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s 92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pu...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ..., ISD = -6.0A, VGS = 0V (Figure 13) TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/s TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/s - 230 1.3 -1.5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse wid...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...C, ISD = -19A, VGS = 0V (Figure 13) TJ = 150oC, ISD = 19A, dISD/dt = 100A/s TJ = 150oC, ISD = 19A, dISD/dt = 100A/s - 170 0.8 -1.5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width l...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ..., ISD = -3.5A, VGS = 0V (Figure 13) TJ = 150oC, ISD = -3.5A, dISD/dt = 100A/s TJ = 150oC, ISD = -3.5A, dISD/dt = 100A/s - 300 1.9 -1.5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse wid...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

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