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  1.8a Datasheet PDF File

For 1.8a Found Datasheets File :: 3176    Search Time::8.328ms    
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    QBW018A0B61-HTZ

Lineage Power Corporation
Part No. QBW018A0B61-HTZ
OCR Text 18A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC Compatible in a Pb-free or SnPb reflow environment High power density: 155 W/in3 Delivers up to 18A Output current High efficiency - 93% at 12V full...
Description 36-75Vdc Input; 12Vdc Output; 18A Output Current

File Size 483.68K  /  14 Page

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    WFP640

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFP640
OCR Text 18A,200V,RDS(on)(Max 0.18)@VGS=10V Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Isolation voltage(VISO=4000V AC) Maximum Junction Temperature Range(150) General Description This Power MOSFET is prod...
Description Silicon N-Channel MOSFET

File Size 612.86K  /  7 Page

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    Microsemi
Part No. APT12067LFLLG
OCR Text ...pt12067b2fll apt12067lfll 1200v 18a 0.670 ? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantl...
Description FREDFETs

File Size 98.23K  /  5 Page

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    QBW018A0B QBW018A0B-H QBW018A0B-P QBW018A0B1 QBW018A0B1-H QBW018A0B1-HZ QBW018A0B1Z QBW018A0B41 QBW018A0B61 QBW018A0B61Z

Lineage Power Corporation
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Part No. QBW018A0B QBW018A0B-H QBW018A0B-P QBW018A0B1 QBW018A0B1-H QBW018A0B1-HZ QBW018A0B1Z QBW018A0B41 QBW018A0B61 QBW018A0B61Z QBW018A0B641 QBW018A0B641Z QBW018A0B741-BHZ QBW018A0B71-BH QBW018A0BZ
OCR Text 18A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC (-Z versions) Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions) High power density: 155 W/in 3 High efficien...
Description 36-75Vdc Input; 12Vdc Output; 18A Output Current

File Size 493.41K  /  16 Page

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    GA200TD120U

IRF[International Rectifier]
Part No. GA200TD120U
OCR Text ...t Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% I...
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK

File Size 295.85K  /  10 Page

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    GA400TD60U

IRF[International Rectifier]
Part No. GA400TD60U
OCR Text ...t Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic ...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT

File Size 235.92K  /  10 Page

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    NTE2931

NTE Electronics
Part No. NTE2931
OCR Text ...tarting TJ = +25C. Note 3. ISD 18A, di/dt 260A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient...
Description 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.33K  /  3 Page

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    NTE2944

NTE Electronics
Part No. NTE2944
OCR Text ...y Diode) Note 2 TJ = +25C, IS = 18A, VGS = 0V, Note 4 TJ = +25C, IF = 18A, dIF/dt = 100A/s VGS = 10V, ID = 18A, VDS = 0.8 Max. Rating, (Gate charge is essentially independent of operating temperature) VDD = 0.5 BVDSS, ID = 18A, ZO = 9.1, (M...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 25.20K  /  3 Page

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    SHD226402

Sensitron
Part No. SHD226402
OCR Text ...FEATURES: 100 Volt, 0.092 Ohm, 18A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY140 Series Add Suffix `C' to the Part Number for Ceramic Seals MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE O...
Description HERMETIC POWER MOSFET N-CHANNEL

File Size 60.10K  /  3 Page

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    HFP640

SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Part No. HFP640
OCR Text ...nvironment TO-220 Features 18A,200V,RDS(on) <0.18@VGS =10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF640 * 1- G 2-D 3-S Maximum RatingsTa=25 unless otherwise specified T stg ---...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 353.77K  /  6 Page

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