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  0.016w Datasheet PDF File

For 0.016w Found Datasheets File :: 17    Search Time::1.375ms    
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    NTE198

NTE[NTE Electronics]
Part No. NTE198
OCR Text .... . . . . . . . . . . . . . . . 0.016w/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Silicon NPN Transistor High Voltage Power Transistor

File Size 21.05K  /  2 Page

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    APT20M16B2FLL APT20M16LFLL

ADPOW[Advanced Power Technology]
Part No. APT20M16B2FLL APT20M16LFLL
OCR Text 0.016w POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly low...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 59.15K  /  2 Page

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    APT20M16B2LL APT20M16LLL

ADPOW[Advanced Power Technology]
Part No. APT20M16B2LL APT20M16LLL
OCR Text 0.016w POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 57.64K  /  2 Page

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    IRL3202S 2247

International Rectifier, Corp.
Part No. IRL3202S 2247
OCR Text ... VDSS = 20V G S RDS(on) = 0.016w ID = 48A Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an op...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V的单个N -沟道HEXFET功率MOSFET的一项D2 - PAK封装
From old datasheet system
HEXFET? Power MOSFET

File Size 120.98K  /  8 Page

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    IRL3202 2246

International Rectifier
Part No. IRL3202 2246
OCR Text ...hing G VDSS = 20V RDS(on) = 0.016w S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimize...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET
From old datasheet system

File Size 85.46K  /  7 Page

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    IXDD430YI IXDD430 IXDD430CI IXDS430 IXDS430SI IXDN430 IXDN430CI IXDN430YI IXDI430 IXDI430CI IXDI430YI IXDD430MCI IXDD430

IXYS Corporation
Part No. IXDD430YI IXDD430 IXDD430CI IXDS430 IXDS430SI IXDN430 IXDN430CI IXDN430YI IXDI430 IXDI430CI IXDI430YI IXDD430MCI IXDD430MYI
OCR Text ... P a rt N u m b e r IX D D 4 3 0 Y I IX D D 4 3 0 C I IX D I4 3 0 Y I IX D I4 3 0 C I IX D N 4 3 0 Y I IX D N 4 3 0 C I IX D S 4 3 0 S I P ...016W/oC -65 oC to 150 oC 300 oC V a lu e 150 o C -55 o C to 125 o C T herm al Im pedance T O 2...
Description Power Intergrated ICs
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

File Size 777.80K  /  12 Page

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    NTE264 NTE263

NTE[NTE Electronics]
Part No. NTE264 NTE263
OCR Text .... . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...016W/C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon Complementary Transistors Darlington Power Amplifier

File Size 24.14K  /  2 Page

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    IRF[International Rectifier]
Part No. IRL3202S
OCR Text ... VDSS = 20V G S RDS(on) = 0.016w ID = 48A Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an op...
Description HEXFET Power MOSFET

File Size 93.76K  /  8 Page

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    NTE[NTE Electronics]
Part No. NTE262 NTE261
OCR Text .... . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...016W/C Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier

File Size 24.11K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE55 NTE54
OCR Text .... . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...016W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

File Size 22.51K  /  2 Page

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For 0.016w Found Datasheets File :: 17    Search Time::1.375ms    
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