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IRF[International Rectifier]
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| Part No. |
IRL3202S
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| OCR Text |
...
VDSS = 20V
G S
RDS(on) = 0.016w ID = 48A
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an op... |
| Description |
HEXFET Power MOSFET
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| File Size |
93.76K /
8 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE262 NTE261
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| OCR Text |
.... . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...016W/C Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
Silicon complementary PNP transistor. Darlington power amplifier. Silicon Complementary Transistors Darlington Power Amplifier
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| File Size |
24.11K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE55 NTE54
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| OCR Text |
.... . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...016W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Complementary Transistors High Frequency Driver for Audio Amplifier
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| File Size |
22.51K /
2 Page |
View
it Online |
Download Datasheet
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For
0.016w Found Datasheets File :: 17 Search Time::1.375ms Page :: | <1> | 2 | |
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