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Agilent (Hewlett-Packard)
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Part No. |
ADA-4743
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OCR Text |
...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic... |
Description |
ADA-4743 · Silicon Bipolar Darlington Amplifier
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File Size |
109.95K /
10 Page |
View
it Online |
Download Datasheet
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Agilent (Hewlett-Packard)
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Part No. |
ABA-54563
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OCR Text |
...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic... |
Description |
ABA-54563 · Low Cost Broadband Silicon RFIC Amplifier
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File Size |
110.06K /
12 Page |
View
it Online |
Download Datasheet
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![](images/bg04.gif) |
Agilent (Hewlett-Packard)
|
Part No. |
ADA-4643
|
OCR Text |
...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic... |
Description |
ADA-4643 · Silicon Bipolar Darlington Amplifier
|
File Size |
113.04K /
11 Page |
View
it Online |
Download Datasheet
|
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Price and Availability
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