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  id-1.8a Datasheet PDF File

For id-1.8a Found Datasheets File :: 978    Search Time::3.907ms    
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    GTM
Part No. GJ35N03
OCR Text ...E POWER MOSFET BVDSS RDS(ON) ID 25V 13.5m 36A The GJ35N03 provide the designer with the best combination of fast switching, ruggedi...18A VGS= 20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A ID=18A VDS=20V VGS=5V VD...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 249.13K  /  4 Page

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    2SK2728

HITACHI[Hitachi Semiconductor]
Part No. 2SK2728
OCR Text ... = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 30 18 72 18 18 18 150 150 -55 to +150 Unit V V A A A A...18A, VGS = 0 I F = 18A, VGS = 0 diF/ dt = 100A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 49.94K  /  10 Page

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    IRFP250N IRFP250

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP250N IRFP250
OCR Text ... 200V RDS(on) = 0.075 G S ID = 30A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t...18A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 18A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V,...
Description    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

File Size 120.07K  /  8 Page

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    CED62A2 CEU62A2

Chino-Excel Technology
Part No. CED62A2 CEU62A2
OCR Text ...wise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C 12 48 140 48 0.38 -55 to 150 Maximum Power Dissipation...18A, VGS = 5V VDD = 10V, ID = 18A, VGS = 5V, RGEN = 3.3 17 12 55 30 35 4 12 45 1.3 35 25 110 60 45 n...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 112.84K  /  4 Page

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    FS7SM-18 FS7SM-18A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Part No. FS7SM-18 FS7SM-18A
OCR Text .............................. 2.0 ID ........................................................................................... 7A TO-3P ...18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 45.68K  /  4 Page

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    WFW18N50

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFW18N50
OCR Text ...e Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25) Continuous Drai...18A RG=25 (Note4,5) VDD=400V, VGS=10V, ID=18A (Note4,5) Min 30 500 3 - Type 0.5 0.27 16 2530...
Description Silicon N-Channel MOSFET

File Size 320.22K  /  7 Page

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    2SK2755-01 2SK2755

FUJI[Fuji Electric]
Part No. 2SK2755-01 2SK2755
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 450 18 72 30 18 185 125 150 -55 ~ +150 Unit V A A V A mJ W ...18A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C ...
Description N-channel MOS-FET

File Size 289.20K  /  2 Page

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    FS18SM-10

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS18SM-10
OCR Text ............................. 0.40 ID ......................................................................................... 18A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, ...
Description HIGH-SPEED SWITCHING USE

File Size 43.54K  /  4 Page

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    SHD226402

Sensitron
Part No. SHD226402
OCR Text ...OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG PD SYMBOL BVDSS RDS(ON) VGS(th) gfs IDSS IGSS td(ON) tr td(OFF) tf VSD trr Ciss Coss Crss Rt...18A, TURN OFF DELAY TIME RG = 9.1W, FALL TIME VGS = 10V DIODE FORWARD VOLTAGE TC = 25C, IS = 18A, VG...
Description HERMETIC POWER MOSFET N-CHANNEL

File Size 60.10K  /  3 Page

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    WFP640

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFP640
OCR Text ...e Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction a...18A (Note4,5) 8 22 13 39 tf toff VDD=160V, 45 70 RG=25 (Note4,5) 327 108 - Symbol IGSS V(BR)GSS ...
Description Silicon N-Channel MOSFET

File Size 612.86K  /  7 Page

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