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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4700L AO4700
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| OCR Text |
...ID = 6.9A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A
K
G S A
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Volta... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
118.67K /
5 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4812L AO4812
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| OCR Text |
...ID = 6.9A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.41K /
4 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4818L AO4818
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| OCR Text |
...ON) < 19m (VGS = 10V) RDS(ON) < 28m (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS G... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
193.57K /
4 Page |
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it Online |
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Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP600L AOP600
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| OCR Text |
...5A (V GS = 10V) -6.6A RDS(ON) < 28m < 35m (VGS = -10V) < 43m < 58m (VGS =- 4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings T A=25C unless otherwise ... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
136.97K /
7 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP800L AOP800
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| OCR Text |
...ON) < 18m (VGS = 10V) RDS(ON) < 28m (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
PDIP-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS G... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
103.18K /
4 Page |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP40P03GI
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| OCR Text |
...FET
BVDSS RDS(ON) ID
-30V 28m[ -30A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
The T... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
37.82K /
4 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9564GM ADVANCEDPOWERELECTRONICSCORP-AP9564GM
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| OCR Text |
...FET
BVDSS RDS(ON)
G
-40V 28m -7.3A
ID
SO-8
S S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.63K /
4 Page |
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it Online |
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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...56m) 1.60 41.9m( 31m) 1.70 38m( 28m) 1.90 57m( 42m) 1.95 31m( 23m) 2.20 31.1m( 23m) 1.85 Rated Current (A) *4 D.C.R.() : Max.(Typ.) 18m( 13m) 24m( 18m) Rated Current (A) *4 2.60 2.40 20.3m( 15m) 27.0m( 20m) 2.30 2.10 D.C.R.() : Max.(Typ.) 1... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28
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| OCR Text |
...56 68 82 100 31m( 23m) 38m( 28m) 2.20 1.90 D.C.R.( ) : Max.(Typ.) 18m( 13m) 24m( 18m) Temperature Rise Rated Current (A) * 4 2.60 2.40
Measuring Freq. (L) / L CDRH5D28 10 kHz
Tolerance of Inductance / CDRH5D28 2.5 H - 100 H 3... |
| Description |
POWER INDUCTORS (SMD Type)
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| File Size |
214.18K /
1 Page |
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it Online |
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Price and Availability
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