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    RA01L8693MA10

Mitsubishi Electric Semiconductor
Part No. RA01L8693MA10
OCR Text ...2 jun 2010 1 / 12 electrostatic sensitive device observe handling precautions description the ra0 1l8693ma is a 1.4 - watt rf mosfet amplifi...gate voltage increases. with a gate voltage around 0.5 v (minimum), output power and drain current i...
Description 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

File Size 265.44K  /  12 Page

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    Mitsubishi Electric Sem...
Part No. RA07H0608M
OCR Text ... 2003 1 / 9 electrostatic sensitive device observe handling precautions description the ra 07h0608 m is a 7 - watt rf mosfet am...gate voltag e (v gg =0v), only a small leakage current flows into the drain and the rf input signa...
Description MITSUBISHI RF MOSFET MODULE

File Size 65.47K  /  9 Page

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    DIM800ECM33-F00012 DIM800ECM33-F000-15

Dynex Semiconductor
Part No. DIM800ECM33-F00012 DIM800ECM33-F000-15
OCR Text ... caution : this device is sensitive to electrostatic discharge. users should follow esd handling procedures ...gate bipol ar transistor (igbt) chopper module. the igbt has a wide reverse bias safe operat...
Description IGBT Chopper Module

File Size 325.31K  /  8 Page

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    DIM400XCM33-F00011 DIM400XCM33-F000-15

Dynex Semiconductor
Part No. DIM400XCM33-F00011 DIM400XCM33-F000-15
OCR Text ... caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures ...gate bipolar transistor (igbt) chopper module. the igbt has a wide reverse bias safe operati...
Description IGBT Chopper Module

File Size 304.54K  /  8 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FDS4672AL86Z
OCR Text ... ons for handling electrostatic sensitive devices at tention observe preca uti ons for handling electrostatic sensitive devices at tention observe preca uti ons for handling electrostatic sensitive devices static dissipative embossed carrie...
Description 11000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 264.16K  /  8 Page

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    Allegro Microsystems Inc
Part No. A3144EUA A3144EU A3143EU A3144LU
OCR Text SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter ma...gate flash. www.allegromicro.com 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMP. ...
Description From old datasheet system
HALL-EFFECT SWITCH,SINGLE-ENDED,BIPOLAR,SIP,3PIN,PLASTIC

File Size 137.09K  /  8 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DIM800FSM1 DIM800FSM17-A000
OCR Text ...ale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi....Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissi...
Description Single Switch IGBT Module Preliminary Information

File Size 143.59K  /  10 Page

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    SGS Thomson Microelectronics
Part No. AN858
OCR Text ... xpanded. ab e v f triac 3q = w sensitive scr = l triac 4q = standard scr= 1/21 wafer manufacturing (diffusion, metallization) qa gate dice separation 100% electrical test 100% visual inspection chips delivered in compartment box e v deli...
Description SCRS AND TRIACS DICE

File Size 153.65K  /  22 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DIM800FSS1 DIM800FSS17-A000
OCR Text ...ale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi....Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissi...
Description Single Switch IGBT Module

File Size 142.51K  /  10 Page

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