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  field-mounting Datasheet PDF File

For field-mounting Found Datasheets File :: 5689    Search Time::1.219ms    
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    PHB7N60E PHP7N60E PHW7N60E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB7N60E PHP7N60E PHW7N60E
OCR Text ...ON N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer ...mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain1 source SOT78 (TO220AB) tab ...
Description PowerMOS transistors Avalanche energy rated

File Size 91.11K  /  10 Page

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    PHW7N60

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHW7N60
OCR Text ...ION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-s...mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 0.85 UNIT K/W K/W ...
Description PowerMOS transistor

File Size 51.89K  /  7 Page

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    PSL486-7R SL486 PSL126-7R PSL128-7R PSL129-2R PSL156-7R PSL159-2R PSL158-7R PSL246-7R PSL248-7R PSL249-2R PSL366-7R PSL3

POWER-ONE[Power-One]
Part No. PSL486-7R SL486 PSL126-7R PSL128-7R PSL129-2R PSL156-7R PSL159-2R PSL158-7R PSL246-7R PSL248-7R PSL249-2R PSL366-7R PSL368-7R PSL5A10-7R PSL5A11-2R PSL5A12-7R
OCR Text ...tatic discharge Electromagnetic field Electr. fast transients/bursts Surge Conducted disturbances Electromagnetic emissions IEC/EN 61000-4-2...mounting screws) 107 (4.21") 100 (3.94") Measuring point of case temperature TC 173.7 (6...
Description RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
RECTIFIER STANDARD SINGLE 1A 1000V 1000 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK
TVS UNI-DIR 24V 1500W DO-201
6...12 A Switching Regulators

File Size 57.97K  /  4 Page

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    SI9956DY

NXP Semiconductors
Philips Semiconductors
Part No. SI9956DY
OCR Text field-effect transistor M3D315 Rev. 01 -- 16 July 2001 Product data 1. Description Dual N-channel enhancement mode field-effect t...mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting b...
Description N-channel enhancement mode field-effect transistor

File Size 95.45K  /  13 Page

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    AN48800A

Panasonic Semiconductor
Part No. AN48800A
OCR Text field operation 0.40+0.10 -0.05 2 1.10+0.20 -0.10 High sensitivity (6 mT max.) due to offset cancel circuit and a new sample and ...mounting magnet to product incorporating Hall IC Magnet Plastic bar Plastic cover Magnet f...
Description Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation

File Size 255.47K  /  4 Page

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text ...m arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18 GHz frequency range. Electrical Specifications, TA = 25C Symbol NFO P...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

File Size 38.39K  /  3 Page

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    BUK7608-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7608-55
OCR Text ...enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protectio...
Description TrenchMOS transistor Standard level FET

File Size 65.96K  /  8 Page

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    BUK9608-55

NXP Semiconductors
Philips Semiconductors
Part No. BUK9608-55
OCR Text ...el enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection...
Description TrenchMOS transistor Logic level FET

File Size 68.11K  /  8 Page

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    IRF640 IRF640S

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. IRF640 IRF640S
OCR Text ...ON N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supp...mounting package. PINNING PIN 1 2 3 tab gate drain1 source drain DESCRIPTION SOT78 (TO220AB) ...
Description N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 93.86K  /  9 Page

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    MRF154

MOTOROLA[Motorola, Inc]
Part No. MRF154
OCR Text Field Effect Transistor N-Channel Enhancement-Mode MOSFET * Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain...MOUNTING OF HIGH POWER RF POWER TRANSISTORS The package of this device is designed for conduction co...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 160.11K  /  8 Page

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For field-mounting Found Datasheets File :: 5689    Search Time::1.219ms    
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