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  ds-308 Datasheet PDF File

For ds-308 Found Datasheets File :: 226    Search Time::2.485ms    
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    MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D

ONSEMI[ON Semiconductor]
Part No. MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D
OCR Text ...ELECTRICAL CHARACTERISTICS R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.2 0.18 0.16 ...308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308...
Description Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23

File Size 76.08K  /  8 Page

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    IRFS450A

Fairchild Semiconductor
Part No. IRFS450A
OCR Text ...s : oe 1 V =0 V . GS 2 V =5 V . DS 0 3 2 0 s P l e T s .5 us et 6 8 1 0 10 0 @ Nt s: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0 - 5 oC 5 1 0 -1 2 4 VDS , Drain-Source Voltage [V] VGS , Gate-S...
Description Advanced Power MOSFET (500V, 0.4ohm, 9.6A)

File Size 228.26K  /  7 Page

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    IRSF3021 2426 IRSF3021L

International Rectifier
Part No. IRSF3021 2426 IRSF3021L
OCR Text ...cified.) Symbol Parameter V ds,clamp Drain to source clamp voltage R ds(on) Drain to source on resistance Idss Drain to source leakage c...308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong Kong Tel:...
Description TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5A I(D) | SOT-223
From old datasheet system
FULLY PROTECTED POWER MOSFET SWITCH

File Size 101.11K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT55M50JFLL
OCR Text ... APT60DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 pla...
Description POWER MOS 7 FREDFET

File Size 166.62K  /  5 Page

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    SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. C67078-S3109-A2 BUZ308
OCR Text ... ID 10 1 ZthJC 10 0 DS / I D 10 0 = V 100 s 10 -1 D = 0.50 1 ms R DS (o n) 0.20 0.10 10 -2 0.0...308 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 6.0 A 5.0 Typ. dr...
Description From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

File Size 242.25K  /  9 Page

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For ds-308 Found Datasheets File :: 226    Search Time::2.485ms    
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