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  poly-silicon Datasheet PDF File

For poly-silicon Found Datasheets File :: 510    Search Time::1.328ms    
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    Eon Silicon Solution, Inc.
Part No. EN29LV160B-70TP EN29LV160B-90BP EN29LV160B-90TIP EN29LV160B-70BIP EN29LV160T-70BIP
OCR Text ... ? 0.23 m triple-metal double-poly triple-well cmos flash technology ? low vcc write inhibit < 2.5v ? >100k program/...silicon solution, inc., www.essi.com.tw or modifications due to changes in technical specifications...
Description 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,

File Size 436.28K  /  45 Page

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    EN29LV400AB45RBCP EN29LV400AB45RBIP EN29LV400AB45RNCP EN29LV400AB45RNIP EN29LV400AB45RTCP EN29LV400AB45RTIP EN29LV400AB7

Eon Silicon Solution Inc.
Eon Silicon Solution In...
Part No. EN29LV400AB45RBCP EN29LV400AB45RBIP EN29LV400AB45RNCP EN29LV400AB45RNIP EN29LV400AB45RTCP EN29LV400AB45RTIP EN29LV400AB70BCP EN29LV400AB70BIP EN29LV400AB70NCP EN29LV400AB70NIP EN29LV400AB70TIP EN29LV400AB70TCP EN29LV400AT55RNCP EN29LV400AT45RNCP EN29LV400AB55RNCP EN29LV400AT55RBIP EN29LV400AT55RTIP EN29LV400AT55RBCP EN29LV400AT55RTCP EN29LV400AT55RNIP EN29LV400AB55RTIP
OCR Text ...d mode ? triple-metal double-poly triple-well cmos flash technology ? low vcc write inhibit < 2.5v ? minimum 100k program/eras...silicon solution, inc., www.eons si.com or modifications due to changes in technical specific...
Description 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

File Size 427.78K  /  43 Page

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    EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70TIP

Eon Silicon Solution Inc.
Part No. EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70TIP
OCR Text ...d mode ? triple-metal double-poly triple-well cmos flash technology ? low vcc write inhibit < 2.5v ? minimum 100k program/eras...silicon solution, inc., www.eons si.com or modifications due to changes in technical specific...
Description 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

File Size 436.30K  /  44 Page

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    http://
Part No. EN29LV800AB-55RBI EN29LV800AT-55RBIP EN29LV800AT-55RBC EN29LV800AT-55RTI EN29LV800AT-70TI EN29LV800AT-70TIP EN29LV800AT-90TC EN29LV800AT-90TCP EN29LV800AT-55RTC EN29LV800AT-55RTIP EN29LV800AT-55RBCP EN29LV800AT-55RTCP EN29LV800AT-70TC EN29LV800AT-70TCP EN29LV800AT-90TI
OCR Text ...on 0.18 m triple-metal double poly triple-well cmos flash technology ? high performance - a ccess t i mes as f a st as 55 ns ?...silicon solution, inc., www. e s s i . c o m . t w or modifications due to changes in technical ...
Description 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

File Size 360.30K  /  41 Page

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    SGA-9189

Stanford Microdevices
Part No. SGA-9189
OCR Text ...ed self-aligned emitter, double poly HBT process has been in production by our foundry since 1998. The process has been successfully used fo...Silicon wafer processing. Package Type The SGA-9189 power amplifier is packaged in a plastic encapsu...
Description Reliability Qualification Report

File Size 447.85K  /  5 Page

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    MAX2682EUT

List of Unclassifed Manufacturers
ETC[ETC]
Part No. MAX2682EUT
OCR Text ...licon nitride/ Silicon dioxide) Poly / Au None Metal1: 1.2; Metal2: 1.2; Metal3: 2.8; Metal4: 5.6 microns (as drawn) Metal1: 1.3; Metal2: 1.4; Metal3: 2.6; Metal4: 2.6 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw V. Quality Assurance Inf...
Description PLASTIC ENCAPSULATED DEVICES

File Size 53.55K  /  7 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MC33596FJER2 MC33596 MC33596FCAE MC33596FCAER2 MC33596FCE MC33596FCER2 MC33596FJAE MC33596FJAER2 MC33596FJE
OCR Text ...ency synthesizer. An integrated poly-phase filter performs rejection of the image frequency. The low intermediate frequency allows integration of the IF filter providing the selectivity. The center frequency is tuned by automatic frequency ...
Description PLL Tuned UHF Receiver for Data Transfer Applications

File Size 445.02K  /  58 Page

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    PBL40310

ERICSSON[Ericsson]
Part No. PBL40310
OCR Text ...art deep trench isolated double-poly silicon bipolar process with additional features for improved wireless performance has been used. On-chip capacitors and inductors are used for the integrated internal matching network. Special front-sid...
Description 3.5 V GSM 900 MHz Power Amplifier

File Size 64.87K  /  4 Page

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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL40309
OCR Text ...art deep trench isolated double-poly silicon bipolar process with additional features for improved wireless performance has been used. On-chip capacitors and inductors are used for the integrated internal matching network. Special front-sid...
Description 3.6 V Differential Power Amplifier for DECT Telecommunications system

File Size 84.19K  /  6 Page

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For poly-silicon Found Datasheets File :: 510    Search Time::1.328ms    
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