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  ds-308 Datasheet PDF File

For ds-308 Found Datasheets File :: 223    Search Time::1.312ms    
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    ADPOW[Advanced Power Technology]
Part No. APT55M50JFLL
OCR Text ... APT60DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 pla...
Description POWER MOS 7 FREDFET

File Size 166.62K  /  5 Page

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    IXYS[IXYS Corporation]
Part No. VWI20-06P1 L558
OCR Text ....75 5.0 3375 5.25 k K Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to hea...308 VWI 20-06P1 IGBT IXYS reserves the right to change limits, test conditions and dimensio...
Description IGBT Module

File Size 205.47K  /  5 Page

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    2N7002LT1-D 2N7002LT1/D

ON Semiconductor
Part No. 2N7002LT1-D 2N7002LT1/D
OCR Text .... Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +...308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308...
Description 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT3
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT?3

File Size 64.46K  /  8 Page

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    2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7000-D 2N7000/D

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ONSEMI[ON Semiconductor]
Part No. 2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7000-D 2N7000/D
OCR Text .... Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +...308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308...
Description Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset

File Size 55.80K  /  4 Page

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    BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS123LT1

ON Semiconductor
Part No. BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS123LT1
OCR Text .... Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +...308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308...
Description Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes

File Size 63.59K  /  8 Page

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    MPF990NBSP MPF990

ON Semiconductor
Part No. MPF990NBSP MPF990
OCR Text ... 3 MPF930, MPF960, MPF990 V DS , DRAIN-SOURCE VOLTAGE (VOLTS) 10 5.0 C, CAPACITANCE (pF) VGS = 10 V 2.0 1.0 0.5 0.2 0.1 -55 -35 -15 85 1...308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308...
Description N-Channel Enhancement MOSFET
From old datasheet system

File Size 59.57K  /  8 Page

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    Linear Technology, Corp.
Part No. LT4351CMSPBF LT4351CMSTRPBF LT4351IMSPBF LT4351IMSTRPBF
OCR Text ...ly is higher. if the mosfets r ds(on) is sufficiently small, the lt4351 will regulate the voltage across the mosfet(s) to 15mv. a status...308 302 ?25 25 100 125 v in = 1.2v v in = 5v v in = 12v v in = 20v temperature (c) ?50 293 v ov(...
Description MOSFET Diode-OR Controller; Package: MSOP; No of Pins: 10; Temperature Range: 0&deg;C to 70&deg;C 0.67 A BUF OR INV BASED MOSFET DRIVER, PDSO10
MOSFET Diode-OR Controller; Package: MSOP; No of Pins: 10; Temperature Range: -40&deg;C to 85&deg;C 0.67 A BUF OR INV BASED MOSFET DRIVER, PDSO10

File Size 1,132.03K  /  20 Page

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    APT50M60L2VFR

Advanced Power Technology
Part No. APT50M60L2VFR
OCR Text ...te drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i ...308 1.3 5 t j = 25c 300 t j = 125c 600 t j = 25c 2.6 t j = 125c 10 t j = 25c 17 t j = 12...
Description POWER MOS V 500V 77A 0.060 Ohm

File Size 79.61K  /  2 Page

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    Infineon
Part No. SPB77N06S2-12
OCR Text ds 55 v r ds ( on ) 12 m i d 77 a feature n-channel enhancement mode 175c operating temperature avalanche rated d v /d t r...308 avalanche energy, single pulse i d =77 a , v dd =25v, r gs =25 e as 280 mj reverse diode d v...
Description N-Channel OptiMOS Power Transistor

File Size 516.13K  /  8 Page

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For ds-308 Found Datasheets File :: 223    Search Time::1.312ms    
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