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2-16g1b Datasheet PDF File

For 2-16g1b Found Datasheets File :: 50 Search Time::1.375ms
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					Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7785-35SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 26 1.3 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm * * Gate Source Drain 20.40.3 0.1 ...
Description	MICROWAVE POWER GaAs FET 微波功率GaAs场效应管
File Size	176.25K / 5 Page	View it Online	Download Datasheet

					TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7785-60SL
OCR Text	... -42 TYP. MAX. 48.0 6.0 13.2 35 -45 15.0 0.8 11.8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1Db Gain P1dB Compress...16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm ? ? Gate @ Source A Drain @ @ A 20.40....
Description	MICROWAVE POWER GaAs FET
File Size	79.91K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5359-60SL
OCR Text	... -42 TYP. MAX. 48.0 9.0 13.2 42 -45 15.0 0.8 11.8 100 CONDITIONS VDS=10V f = 5.3 to 5.9GHz IDSset=9.5A add IM3 IDS2 Tch...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description	MICROWAVE POWER GaAs FET
File Size	106.25K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-12UL
OCR Text	... -44 TYP. MAX. 41.5 8.5 3.2 38 -47 3.2 3.8 0.6 3.8 80 f = 7.5 to 8.5GHz add IM3 dBc A C Recommended gate resistance...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	BROAD BAND INTERNALLY MATCHED FET
File Size	42.73K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5964-16UL
OCR Text	...MIN. -1.0 -5 TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8 CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A gm...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solderin...
Description	MICROWAVE POWER GaAs FET
File Size	119.22K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5964-25UL
OCR Text	... C/W MIN. -1.0 -5 TYP. 5000 -2.5 14.4 1.2 MAX. -4.0 1.5 CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V IGS= -280A ...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solderin...
Description	MICROWAVE POWER GaAs FET
File Size	119.64K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5964-35SLA
OCR Text	... C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 1.3 CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A ...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description	MICROWAVE POWER GaAs FET
File Size	130.21K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-16SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 3600 -2.5 10.5 1.5 MAX. -4.0 2.0 Gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS=...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description	MICROWAVE POWER GaAs FET
File Size	98.77K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-45SL-341
OCR Text	... C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 u The information contained herein is presented only as a guide for the appl...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	500.68K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM4450-12UL
OCR Text	... -44 TYP. MAX. 41.5 10.5 3.2 40 -47 3.2 3.8 0.6 3.8 80 f = 4.4 to 5.0GHz add IM3 dBc A C Recommended gate resistance...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
File Size	44.82K / 4 Page	View it Online	Download Datasheet

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