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ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 234 Search Time::1.203ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT-41532-BLK AT-41532-TR1 AT41532
OCR Text	...m; VCE = 5 V, IC = 5 mA f = 0.9 GHz f = 1.8 GHz f = 2.4 GHz f = 0.9 GHz f = 1.8 GHz f = 2.4 GHz f = 0.9 GHz f = 0.9 GHz f = 0.9 GHz f = 0.9 GHz f = 2.4 GHz Units dB Min Typ 1.0 1.4 1.9 15.5 10.5 9.0 14.5 14.5 25 12.5 13.25 5.2 dB dBm ...
Description	NPN SILICON TRANSISTOR
File Size	143.19K / 14 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE34018 NE34018-T1 NE34018-T2
OCR Text	...igure NF = 0.6 dB TYP. at f = 2 GHz 2 2.1 0.2 1.25 0.1 (1.25) 0.60 0.65 +0.1 0.3 +0.1 -0.05 0.3 0.4 -0.05 0.3 +0.1 -0.05 0.15 +0.1 -0.05 0.3 +0.1 -0.05 (1.3) 4 0 to 0.1 3 x High associated gain 2.0 0.2 Ga = 16 dB TYP. at f = ...
Description	SR BTS VERT LFT 4 ASY PLU L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	112.18K / 16 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5537
OCR Text	... Ratings min typ max 1.0 10 200 GHz pF dB dB dB dB Unit A A Marking : CN Any and all SANYO products described or contained herein do n...2 hFE -- IC Gain-Bandwidth Product, fT - GHz 2 f T -- IC DC Current Gain, hFE 100 7 ...
Description	NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-frequency Amplifier Applications
File Size	31.23K / 3 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio] New Japan Radio Co., Ltd.
Part No.	NJG1102F1 NJG1103F1-C2 NJG1103F1-L4 NJG1103F1-L1 NJG1103F1-L2 NJG1103F1-L3
OCR Text	... -50 1.4 1.6 1.8 2 frequency(GHz) frequency(GHz) Pin vs. Pout (V =2.7V,I =3mA,f=820MHz) 10 5 0 -5 -10 -15 -20 -25 -30 -40 DD DD Pin vs. Pout,IM3 (V =2.7V,I =3mA,f=820+820.1MHz) 10 0 -10 DD DD Pout P-1dB=+0.8dBm Po...
Description	LOW NOISE AMPLIFIER GaAs MMIC
File Size	138.01K / 8 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	2N5109 MSC1304
OCR Text	...packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. ...
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system
File Size	279.19K / 5 Page	View it Online	Download Datasheet

				Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN9DB00 AN9DA00 AN9DE00 AN9FA00 AN9D AN9DC00 AN9DD00 AN9DF00 AN9E AN9EA00 AN9EB00 AN9F
OCR Text	...fT(max) AN9D series to 12 V 2.6 GHz AN9E series to 12 V 3.5 GHz AN9F series to 30 V 300 MHz BVCEO hFE PNP transistor fT(max) BVCEO 14.4 V 14.4 V 30 V hFE Analog Master Slice Remarks 14.4 V 100 to 250 1.0 GHz 14.4 V 30 V 80 to 250 1...
Description	Analog master slice IC series Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR Analog master slice IC series
File Size	90.42K / 6 Page	View it Online	Download Datasheet

				Mitsubishi
Part No.	MGF0921A 0921A
OCR Text	...(dB),PAE(%) MGF0921A freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 S PARAMETERS S11 Mag 0.912 0.905 0.899 0.894 0.891 0.887 0.884 ...
Description	L & S BAND GaAs FET From old datasheet system
File Size	85.84K / 3 Page	View it Online	Download Datasheet

				NEC
Part No.	NE6500379 NE6500379A NE6500379A-T1
OCR Text	... = 6 V, IDset = 500 mA, f = 1.9 GHz ORDERING INFORMATION Part Number NE6500379A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/r...2.5 V, VGS = 0 V VDS = 2.5 V, ID = 21 mA Igd = 21 mA MIN. TYP. 4.5 MAX. Unit A -3.6 1...
Description	3W L, S-BAND POWER GaAs MESFET
File Size	80.50K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	THN6301U
OCR Text	... 14 100 100 100 200 10 0.55 300 GHz pF max V V nA nA Unit CONDITION VCBO VCEO ICBO IEBO hfe Collector-Base Voltage ICE = 100uA, ...2 VCE=8V, Ic=5mA,f=1GHz Insertion Power Gain VCE=8V, Ic=15mA,f=1GHz VCE=8V, Ic=5mA,f=1GHz MSG NFmin ...
Description	NPN Planer RF TRANSISTOR
File Size	102.07K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA810TC UPA810TC-T1 UPA810
OCR Text	...noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * Flat-lead 6-pin thin-type ultra super minimold * Built-in 2 transistors (2 x 2SC5006) ORDERING INFORMATION ...
Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	51.55K / 12 Page	View it Online	Download Datasheet

For ghz-2.655 Found Datasheets File :: 234 Search Time::1.203ms
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