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ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 232 Search Time::1.672ms
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				CEL[California Eastern Labs]
Part No.	UPC2763TB-E3-A UPC2763TB
OCR Text	...t 900 MHz * WIDE BANDWIDTH: 2.7 GHz at -3 dB * HIGH GAIN: 20 dB at 1.9 GHz * SUPER SMALL PACKAGE: SOT-363 package * TAPE AND REEL PACKAGING OPTION AVAILABLE Insertion Power Gain, GP (dB) 24 22 20 18 16 14 12 10 8 VCC = 3.0 V 6 0.1 0.3 1.0...
Description	3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
File Size	157.12K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC508707 2SC5087
OCR Text	... = 1.1dB, \|S21e\|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction ...
Description	Silicon NPN Epitaxial Planar Type
File Size	169.70K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC508807 2SC5088 2SC5088-07
OCR Text	... = 1.1dB, \|S21e\|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction ...
Description	Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
File Size	991.00K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC509207 2SC5092
OCR Text	...= 1.8dB, \|S21e\|2 = 9.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction ...
Description	Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
File Size	999.88K / 7 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWL26NC
OCR Text	GHz * 5V to 10V Operation 376 Outline Dimensions 451.5 1 Description The HWL26NC is a medium power GaAs FET designed for various L-band & S-band applications. 226 2 4 226.0 76 Absolute Maximum Ratings VDS VGS...
Description	L-Band Power FET Non-Via Hole Chip
File Size	90.84K / 2 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWL26NPB
OCR Text	...7 0.8 0.9 1.0 1.1 30 20 10 0 f (GHz) PAE (%) 60 50 40 Po Gain PAE Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=110mA Po (dBm) 30 25 20 15 Gain 10 5 0 1.6 1.7 1.8 1.9 2.0 2.1 PAE (%) 60 50 40 30 20 10 0 f (GHz) Po Gain PAE...
Description	L-Band GaAs Power FET
File Size	103.14K / 7 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWL27NPB
OCR Text	... 0.7 0.8 0.9 1.0 20 10 0 1.1 f (GHz) PAE (%) 60 50 40 30 Po Gain PAE Power Derating Curve Total Power Dissipation,PT (W) 1 (25,0.7) ...2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 h...
Description	L-Band GaAs Power FET
File Size	89.90K / 4 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWL32NPA HWL32NPA-V1-15
OCR Text	... 0 0.7 0.8 0.9 1.0 1.1 0 f (GHz) Power Derating Curve Total Power Dissipation,PT (W) 4 (25,2.8) 2 (150,0) 0 0 50 100 150 Case Temperature,TC () Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-...
Description	L-Band GaAs Power FET
File Size	96.01K / 4 Page	View it Online	Download Datasheet

				http:// Mimix Broadband
Part No.	XL1000-BD-EV1 XL1000-BD-000V
OCR Text	GHz GaAs MMIC Low Noise Amplifier July 2007 - Rev 24-Jul-07 L1000-BD Chip Device Layout Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point ...
Description	20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
File Size	264.46K / 7 Page	View it Online	Download Datasheet

For ghz-2.655 Found Datasheets File :: 232 Search Time::1.672ms
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