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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
RMPA39000
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| OCR Text |
GHz GaAs MMIC Power Amplifier
General Description
The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for ...2.90mm x 50m
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive D... |
| Description |
37 - 40 GHz GaAs MMIC Power Amplifier
37-40 GHz GaAs MMIC Power Amplifier
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| File Size |
198.78K /
10 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2022-12
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| OCR Text |
GHz Discrete power pHEMT
* * * * * * * *
TGF2022-12
Key Features and Performance
Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat ...2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint's proven standar... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
120.38K /
8 Page |
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TELEDYNE[Teledyne Technologies Incorporated]
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| Part No. |
TPT-18-6007 TLT-18-6007 TMT-18-6006 TMT-18-6007 TPT-18-6006
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| OCR Text |
GHz - 18 GHz
This Amplifier offers exceptional performance over the band 6 GHz to 18 GHz with 23 dBm P1dB output power and 35 dB Gain. Tele...2 dB Noise Figure (max): 8 dB 23 dBm Output Power @ 1dB Compression: Gain Flatness Vs Frequency: +/-... |
| Description |
Temperature Compensated Amplifier 6 GHz - 18 GHz
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| File Size |
883.48K /
2 Page |
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TELEDYNE[Teledyne Technologies Incorporated]
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| Part No. |
TPT-18-8007 TPT-18-8006
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| OCR Text |
GHz - 18 GHz
This Amplifier offers exceptional performance over the band 8 GHz to 18 GHz with 20 dBm P1dB output power and 35 dB Gain. Tele...2 dB Noise Figure (max): 8 dB 20 dBm Output Power @ 1dB Compression: Gain Flatness Vs Frequency: +/-... |
| Description |
Temperature Compensated Amplifier 8 GHz - 18 GHz
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| File Size |
883.51K /
2 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQP2420B
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| OCR Text |
...et
5
High-Efficiency, 2.4 GHz ISM Band PA for 802.11b WLAN Systems Integrated Output Power Detector Leadless 3.0 x 3.0 mm SMT Package Temperature Compensated Bias Network with Bias Shutdown Mode +23 dBm Linear Output Power
Vcc
N... |
| Description |
2.4GHz ISM Band InGaP HBT Power Amplifier
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| File Size |
365.28K /
10 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQP2420G
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| OCR Text |
...
Features
High Linearity, 2.4 GHz ISM Band PA for 802.11b/g WLAN Systems Integrated Output Power Detector Leadless 3.0 x 3.0 mm SMT Package Temperature Compensated Bias Network with Bias Shutdown Mode EVM < 2% @ +19dBm Linear Output Power... |
| Description |
2.4GHz ISM Band InGaP HBT Power Amplifier
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| File Size |
341.38K /
13 Page |
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CEL[California Eastern Labs]
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| Part No. |
UPA806T-T1-A UPA806T
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| OCR Text |
...SE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 12 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
0.65 2.0 0.2 1.3 2 1
UPA806T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTL... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
165.20K /
10 Page |
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CEL[California Eastern Labs]
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| Part No. |
UPA807T-T1-A UPA807T
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| OCR Text |
...SE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 13 GHz LOW CURRENT OPERATION
2.0 0.2 1.3 2 0.65 1
UPA807T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
167.88K /
12 Page |
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CEL[California Eastern Labs]
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| Part No. |
UPA808T-T1-A UPA808T
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| OCR Text |
...SE FIGURE: NF = 1.3 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz LOW CURRENT OPERATION
0.65 2.0 0.2 1.3 2 1
UPA808T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.1 1.25 0.1
DESCRIPTION
NEC... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
139.84K /
10 Page |
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Price and Availability
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