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  field-mounting Datasheet PDF File

For field-mounting Found Datasheets File :: 5620    Search Time::1.953ms    
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    PHD101NQ03LT PHB_PHD101NQ03LT-02 PHB101NQ03LT

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD101NQ03LT PHB_PHD101NQ03LT-02 PHB101NQ03LT
OCR Text ...cription N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHB10...mounting base, connected to drain (d) [1] g s MBB076 2 2 1 3 MBK116 1 Top view 3 ...
Description From old datasheet system
TrenchMOS logic level FET
TrenchMOS⑩ logic level FET

File Size 85.66K  /  13 Page

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    PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 PHP108NQ03LT

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 PHP108NQ03LT
OCR Text ...ion N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP108NQ03L...mounting base, connected to drain (d) 2 1 MBK106 Simplified outline [1] mb mb mb Symbol d...
Description TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

File Size 96.35K  /  14 Page

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    PHD10N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD10N10E
OCR Text ...ION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, a...
Description PowerMOS transistor

File Size 76.23K  /  7 Page

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    PHD45N03LTA PHB45N03LTA PHP45N03LTA

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD45N03LTA PHB45N03LTA PHP45N03LTA
OCR Text field-effect transistor Rev. 02 -- 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in ...mounting base, connected to drain (d) [1] g s MBB076 2 2 1 MBK106 1 3 MBK116 3 ...
Description N-channel enhancement mode field-effect transistor 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 108.38K  /  14 Page

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    V23832-T2331-M101 V23832-R411-M101 V23832-T2431-M101 V23832-R111-M101 V23832-R121-M101 V23832-R311-M101 V23832-R321-M101

INFINEON[Infineon Technologies AG]
Part No. V23832-T2331-M101 V23832-R411-M101 V23832-T2431-M101 V23832-R111-M101 V23832-R121-M101 V23832-R311-M101 V23832-R321-M101 V23832-R421-M101 V23832-R511-M101 V23832-R521-M101 V23832-T2131-M101
OCR Text ...sign Enables system upgrades in field Low power consumption at increased board density Flat package for height critical application Featu...mounting conditions). With a field strength of 3 V/m, noise frequency ranges from 10 MHz to 2 GHz1)....
Description PAROLI 2 Tx AC/ 1.6 Gbit/s
PAROLI 2 Tx AC, 1.6 Gbit/s

File Size 499.00K  /  30 Page

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    FDT457N

FAIRCHILD[Fairchild Semiconductor]
Part No. FDT457N
OCR Text Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's...mounting surface of guaranteed by design while RCA is determined by the user's board design. the ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 93.11K  /  4 Page

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    MTSF3N02HD ON2662 ON2661

MOTOROLA[Motorola, Inc]
Part No. MTSF3N02HD ON2662 ON2661
OCR Text ...Device TMOS Single N-Channel Field Effect Transistor Micro8TM devices are an advanced series of power MOSFETs which utilize Motorola's...Mounting Information for Micro8 Package Provided SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RD...
Description SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
From old datasheet system

File Size 231.47K  /  12 Page

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    MTSF3N03HD ON2664 ON2663

MOTOROLA[Motorola, Inc]
Part No. MTSF3N03HD ON2664 ON2663
OCR Text ...Device TMOS Single N-Channel Field Effect Transistor Micro8TM devices are an advanced series of power MOSFETs which utilize Motorola's...Mounting Information for Micro8 Package Provided TM SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VO...
Description SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
From old datasheet system

File Size 228.84K  /  12 Page

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    NDS8433

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS8433
OCR Text Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's...mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user'...
Description Single P-Channel Enhancement Mode Field Effect Transistor

File Size 287.61K  /  10 Page

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    NDS8434A

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS8434A
OCR Text Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's ...mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user'...
Description Single P-Channel Enhancement Mode Field Effect Transistor

File Size 285.31K  /  10 Page

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For field-mounting Found Datasheets File :: 5620    Search Time::1.953ms    
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