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  2157.5 Datasheet PDF File

For 2157.5 Found Datasheets File :: 202    Search Time::1.406ms    
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    MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230

MOTOROLA[Motorola, Inc]
Part No. MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. ...
Description MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers

File Size 656.88K  /  12 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ... Package Dimensions unit:mm 2157 [2SJ560] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage D...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    MW6IC2420NBR1

Freescale Semiconductor, Inc
Part No. MW6IC2420NBR1
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. ...
Description RF LDMOS Integrated Power Amplifier

File Size 479.77K  /  12 Page

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    ST3005

Sitronix Technology Co., Ltd.
Part No. ST3005
OCR Text ...2643.04 2533.04 2433.04 2257.04 2157.04 2057.04 1957.04 1781.04 1681.04 1581.04 1481.04 1381.04 1281.04 1081.04 981.04 881.04 781.04 81 DACOVSS33A 62.5 83 DACOVDD33A 62.5 84 DACOVDD33A 62.5 85 86 DACO DACO 62.5 62.5 82 DACOVSS33A 62.5...
Description Speech Decoder/Encoder

File Size 415.35K  /  11 Page

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    P-7SB

Sumida Corporation
Part No. P-7SB
OCR Text ...cification (P-7SB/MW) (Part No. 2157-T110) Item Inductance Unloaded Qu 08 8 Variable 80 in. Measuring Condition Specification (P-7SB/LW) (Part No. SO97159ONP) Item Inductance Unloaded Qu 625 7 85 Variable Mea...
Description IFT COILS

File Size 152.76K  /  2 Page

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    0026481095

Molex Electronics Ltd.
Part No. 0026481095
OCR Text ...127 26-48-2137 26-48-2147 26-48-2157 26-48-2167 26-48-2177 26-48-2187 26-48-2197 26-48-2207 26-48-2217 26-48-2227 26-48-2237 26-48-2247 E...5.08 NONE PK-41671-001 Group No: Pin No: Plating: Pin Length Mating Gold Loc PC Tail Tin Loc Void...
Description MOLEX Connector

File Size 270.07K  /  10 Page

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    Freescale Semiconductors
Part No. MRF6S21100NBR1 MRF6S21100N
OCR Text ...5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. PAR = 8...
Description  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz

File Size 510.14K  /  12 Page

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    BLF6G22LS-7510 BLF6G22LS-75

NXP Semiconductors N.V.
Part No. BLF6G22LS-7510 BLF6G22LS-75
OCR Text ...12.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp IRL D IMD3 ACPR power gain input r...
Description Power LDMOS transistor BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Product description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

File Size 125.09K  /  11 Page

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    BLF6G22LS-75

NXP Semiconductors
Part No. BLF6G22LS-75
OCR Text ...12.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp IRL D IMD3 ACPR power gain input r...
Description Power LDMOS transistor

File Size 74.66K  /  10 Page

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    BLC6G22LS-75 BLC6G22-75

NXP Semiconductors
Part No. BLC6G22LS-75 BLC6G22-75
OCR Text ...12.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) Gp IRL D IMD3 ACPR average out...
Description Power LDMOS transistor

File Size 81.84K  /  11 Page

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