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    Intersil, Corp.
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INTERSIL[Intersil Corporation]
Part No. HGT1S20N60C3S HGTP20N60C3 HGTG20N60C3 FN4492
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls...
Description 45A, 600V, UFS Series N-Channel IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
45A/ 600V/ UFS Series N-Channel IGBT

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    INTERSIL[Intersil Corporation]
Part No. HGTG20N60C3D FN4494
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applica...
Description 45A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. HGTG40N60A4 FN4782
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for h...
Description 600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
From old datasheet system

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    HGTG40N60B3 FN3943

HARRIS SEMICONDUCTOR
Intersil, Corp.
Intersil Corporation
Part No. HGTG40N60B3 FN3943
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls...
Description 70A, 600V, UFS Series N-Channel IGBT(70A, 600V锛?娌??缁????????浣??)
70A, 600V, UFS Series N-Channel IGBT(70A, 600V,N沟道绝缘栅双极晶体管) 70 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. HGTG20N60A4D FN4790 HGTG20N60A4
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applicatio...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

File Size 349.40K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTG20N60B3D FN3739
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low con...
Description 40A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

File Size 134.08K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTP20N60A4 HGTG20N60A4 FN4781
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for h...
Description 600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system

File Size 352.12K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. HGT1S3N60B3DS HGTP3N60B3D FN4414
OCR Text ...nstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate ...
Description 7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. HGT1S3N60C3DS HGTP3N60C3D FN4140
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switchi...
Description 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60A4D HGT1S3N60A4DS FN4818
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applicatio...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

File Size 129.16K  /  10 Page

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For moderately Found Datasheets File :: 295    Search Time::1.157ms    
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