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MIMIX[Mimix Broadband]
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| Part No. |
18KWR0327
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| OCR Text |
GHz GaAs MMIC Image Reject Mixer
November 2005 - Rev 21-Nov-05
18KWR0327 Chip Device Layout
Features
Fundamental Image Reject Mixer ...2 m GaAs HBT device model technology, and is based upon electron beam lithography to ensure high rep... |
| Description |
13.0-25.0 GHz GaAs MMIC Image Reject Mixer
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| File Size |
126.35K /
6 Page |
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GHZTECH[GHz Technology]
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| Part No. |
80143
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| OCR Text |
...lerance TEST CONDITIONS F = 2.3 GHz Ic = 200 mA Vcc = 15 Volts Vce = 15V, Ic =200 mA MIN 1.0 0.125 9.0 4.2 10.0 4.5 10:1 TYP MAX UNITS Watts Watts dB GHz
BVebo BVces BVceo hFE Cob
jc
Emitter to Base Breakdown Collector to Emitter B... |
| Description |
30V N-Channel PowerTrench MOSFET 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz
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| File Size |
222.18K /
4 Page |
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AD[Analog Devices]
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| Part No. |
ADN2815ACPZ-RL7 ADN2815 ADN2815ACPZ ADN2815ACPZ-500RL7
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| OCR Text |
...oupled Min 1.8 0.2 2.3 10 @ 2.5 GHz Differential -15 100 0.65 1000 250 4 200 200 1.5 2.0 3.4 9.8 40.0 20.0 10 200 100 3.6 131 +85 Typ Max 2.8 2.0 2.8 1250 Unit V V V Mb/s dB pF ppm ppm ms s s ms ms ms ms ms ms % ppm ppm V mA C
2.5
Wi... |
| Description |
Continuous Rate 10 Mb/s to 1.25 Gb/s Clock and Data Recovery IC
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| File Size |
262.25K /
24 Page |
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Alpha Industries Inc ALPHA[Alpha Industries]
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| Part No. |
AFM04P2-000
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| OCR Text |
GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC-40 GHz I 0.25 m Ti/Pd/Au Gates I Pass...2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 A Min. 90.0 60.0 1.0 8.0 Typ. 140.0 80.0 3.0 12.0 21... |
| Description |
Ka Band Power GaAs MESFET Chip
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| File Size |
40.99K /
3 Page |
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ALPHA[Alpha Industries] Alpha Industries Inc
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| Part No. |
AFM06P2-000
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| OCR Text |
GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Pass...2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 A Min. 130.0 90.0 1.0 8.0 Typ. 200.0 120.0 3.0 12.0... |
| Description |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
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| File Size |
19.21K /
3 Page |
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Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
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| Part No. |
AFM08P2-000
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| OCR Text |
GHz s High Power Added Efficiency, 20% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via...2 mA 1.4 W -65 to +150C 175C
Electrical Specifications at 25C
Parameter Saturated Drain Current ... |
| Description |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
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| File Size |
19.33K /
3 Page |
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it Online |
Download Datasheet
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Price and Availability
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