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  ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 252    Search Time::2.204ms    
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    UPA826TC UPA826TC-T1

NEC Corp.
Part No. UPA826TC UPA826TC-T1
OCR Text ... VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz Note 2 GHz pF dB dB VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz Notes 1. 2. Pulse Measurement: PW 350 s, Duty Cycle 2% Capacitance between c...
Description RAC15-TB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 15V; Features: Compact AC-DC Power
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

File Size 64.71K  /  12 Page

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    2SC4993

Hitachi Semiconductor
Part No. 2SC4993
OCR Text ...ain bandwidth product fT = 10.5 GHz Typ * High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4993 Absolute Maximum Ratings (Ta =...
Description Silicon NPN Epitaxial

File Size 64.49K  /  10 Page

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    NE34018 NE34018-TI-64-A NE34018-A NE34018-TI-63-A

CEL[California Eastern Labs]
Part No. NE34018 NE34018-TI-64-A NE34018-A NE34018-TI-63-A
OCR Text ...ISE FIGURE: 0.6 dB typical at 2 GHz * HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz * LG = 0.6 m, WG = 400 m * TAPE & REEL PACKAGING 4 NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA 25 20 Noise Figur...
Description GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

File Size 179.76K  /  10 Page

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    NE8500202 NE8500295-8 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE85002-02

NEC[NEC]
California Eastern Labs
Part No. NE8500202 NE8500295-8 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE85002-02
OCR Text ...MANCE FREQUENCY GL RANGE (dBm) (GHz) (dB) POUT 33.8 MIN 33.8 MIN 33.8 MIN 33.5 MIN 2.0 to 10 3.5 to 4.5 5.5 to 6.5 7.5 to 8.5 8.0 MIN 10.5 MIN 9.5 MIN 8.0 MIN DESCRIPTION The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz frequency ...
Description 2 WATT C-BAND POWER GaAs MESFET

File Size 56.48K  /  6 Page

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    MIMIX[Mimix Broadband]
Part No. 18KWR0327
OCR Text GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 Chip Device Layout Features Fundamental Image Reject Mixer ...2 m GaAs HBT device model technology, and is based upon electron beam lithography to ensure high rep...
Description 13.0-25.0 GHz GaAs MMIC Image Reject Mixer

File Size 126.35K  /  6 Page

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    GHZTECH[GHz Technology]
Part No. 80143
OCR Text ...lerance TEST CONDITIONS F = 2.3 GHz Ic = 200 mA Vcc = 15 Volts Vce = 15V, Ic =200 mA MIN 1.0 0.125 9.0 4.2 10.0 4.5 10:1 TYP MAX UNITS Watts Watts dB GHz BVebo BVces BVceo hFE Cob jc Emitter to Base Breakdown Collector to Emitter B...
Description 30V N-Channel PowerTrench MOSFET
1.0 Watts, 15 Volts, Class A Linear to 2300 MHz

File Size 222.18K  /  4 Page

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    AD[Analog Devices]
Part No. ADN2815ACPZ-RL7 ADN2815 ADN2815ACPZ ADN2815ACPZ-500RL7
OCR Text ...oupled Min 1.8 0.2 2.3 10 @ 2.5 GHz Differential -15 100 0.65 1000 250 4 200 200 1.5 2.0 3.4 9.8 40.0 20.0 10 200 100 3.6 131 +85 Typ Max 2.8 2.0 2.8 1250 Unit V V V Mb/s dB pF ppm ppm ms s s ms ms ms ms ms ms % ppm ppm V mA C 2.5 Wi...
Description Continuous Rate 10 Mb/s to 1.25 Gb/s Clock and Data Recovery IC

File Size 262.25K  /  24 Page

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    Alpha Industries Inc
ALPHA[Alpha Industries]
Part No. AFM04P2-000
OCR Text GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC-40 GHz I 0.25 m Ti/Pd/Au Gates I Pass...2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 A Min. 90.0 60.0 1.0 8.0 Typ. 140.0 80.0 3.0 12.0 21...
Description Ka Band Power GaAs MESFET Chip

File Size 40.99K  /  3 Page

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    ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFM06P2-000
OCR Text GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Pass...2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 A Min. 130.0 90.0 1.0 8.0 Typ. 200.0 120.0 3.0 12.0...
Description KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip

File Size 19.21K  /  3 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFM08P2-000
OCR Text GHz s High Power Added Efficiency, 20% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via...2 mA 1.4 W -65 to +150C 175C Electrical Specifications at 25C Parameter Saturated Drain Current ...
Description KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip

File Size 19.33K  /  3 Page

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