4 1t1g - k - 1t7g - k tai wan semiconductor 1 version:b 170 5 1a, 50v - 1000v glass passivated rectifier features low forward voltage drop high current capability high reliability high surge current capability 3mm miniature body compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 applications high frequency rectification freewheeling application switching mode conve rters and inverters in computer and telecommunication mechanical data case: ts - 1 molding compound meets ul 94v - 0 flammability rating packing code with suffix "g" means green compound (halogen - free) terminal: pure tin plated leads, solderable per j - std - 002 meet jesd 201 class 1a whisker test polarity: as marked w eight: 0.2 g (approximately) key parameters p arameter value unit i f(av) 1 a v rrm 50 - 1000 v i fsm 30 a t j max 1 50 c package ts - 1 configuration single die ts - 1 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol 1t1g - k 1t 2g - k 1t 3g - k 1t 4g - k 1t 5g - k 1t 6g - k 1t 7g - k unit marking code on the device 1t 1g 1t 2g 1t 3g 1t 4g 1t 5g 1t 6g 1t7g r epetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v r everse voltage, total rms value v r(rms) 35 70 140 280 420 560 700 v f orward current i f(av) 1 a surge p eak forward current, 8.3 ms single half sine - wave superimposed on rated load per diode i fsm 30 a junction t emperature t j - 55 to +1 50 c storage temperature t stg - 55 to +1 50 c
4 1t1g - k - 1t7g - k tai wan semiconductor 2 version:b 170 5 thermal performance p arameter s ymbol l imit unit junction - to - ambient thermal resistance r ? ja 100 c /w electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol t yp m ax u nit forward voltage per diode (1) 1t1g - k i f = 1 a, t j = 25 c v f - 1.1 v 1t2g - k 1t3g - k - 1.0 v 1t4g - k 1t5g - k 1t6g - k 1t7g - k reverse current @ rated v r per diode (2) t j = 25 c i r - 5 a t j = 125 c - 10 0 a junction capacitance 1 mhz, v r =4.0v c j 1 0 - p f notes: 1. pulse test with pw=0.3 ms 2. pulse test with pw= 30 ms ordering information part no. packing code packing code suffix package packing 1 t x g - k (note 1 , 2 ) a0 g ts - 1 3,000 / ammo box (52mm taping) a1 ts - 1 3,000 / ammo box (26mm taping) r0 ts - 1 5,000 / 13" paper reel b0 ts - 1 1,000 / bulk packing notes: 1. "x" defines voltage from 50v ( 1t 1 g - k ) to 10 00v ( 1t7 g - k ) 2. whole series with green compound (halogen - free) example p/n example p/n part no. packing code packing code suffix description 1t 1 g - k a0g 1t1 g - k a0 g green compound
4 1t1g - k - 1t7g - k tai wan semiconductor 3 version:b 170 5 characteristics curves (t a = 25c unless otherwise noted) fig . 1 forward current derating curve fig . 2 typical junction capacitance fig . 3 typical reverse characteristics fig . 4 typical forward characteristics 0 0.5 1 1.5 0 25 50 75 100 125 150 ambient temperature( c) 1 10 100 0.1 1 10 reverse voltage (v) f=1.0mhz vsig=50mvp - p 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 t j =125 c t j =75 c t j =25 c 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1t3g - k - 1t7g - k 1t1g - k - 1t2g - k capacitance (pf) instantaneous reverse current ( a) percent of rated peak reverse voltage (%) instantaneous forward current (a) (a) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 pulse width t j =25 c t j =125 c uf1dlw forward voltage (v) average forward current (a)
4 1t1g - k - 1t7g - k tai wan semiconductor 4 version:b 170 5 0 10 20 30 40 50 1 10 100 number of cycles at 60 hz 8.3ms single half wave characteristics curves (t a = 25c unless otherwise noted) fig . 5 m aximum n on - repetitive f orward s urge c urrent fig.6 reverse recovery time characteristic and test circuit diagram peak forward surge current(a)
4 1t1g - k - 1t7g - k tai wan semiconductor 5 version:b 170 5 package outline dimensions ts - 1 marking diagram p/n = marking code g = green compound y w = date code f = factory code dim. unit (mm) unit (inch) min max min max a 2.00 2.70 0.079 0.106 b 0.53 0.64 0.021 0.025 c 25.40 - 1.000 - d 3.00 3.30 0.118 0.130 e 25.40 - 1.000 -
4 1t1g - k - 1t7g - k tai wan semiconductor 6 version:b 170 5 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such im proper use or sale.
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